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Mode MOSFET. PJA3416 Datasheet

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Mode MOSFET. PJA3416 Datasheet






PJA3416 MOSFET. Datasheet pdf. Equivalent




PJA3416 MOSFET. Datasheet pdf. Equivalent





Part

PJA3416

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3416 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 5.8A F eatures  RDS(ON) , VGS@4.5V, ID@5.8A <27mΩ  RDS(ON) , VGS@2.5V, ID@3.2A <40mΩ  RDS(ON) , VGS@1.8V, ID@1.6A <80mΩ  Advanced Trench Process Tec hnology  Specially Designed for Swit ch Load, PWM Application, etc..  Lea d free in compliance with EU RoHS 2011/ 65/EU directive.  Green molding com.
Manufacture

Pan Jit International

Datasheet
Download PJA3416 Datasheet


Pan Jit International PJA3416

PJA3416; pound as per IEC61249 Std. (Halogen Free ) Mechanical Data  Case: SOT-23 Pack age  Terminals : Solderable per MIL- STD-750, Method 2026  Approx. Weight : 0.0003 ounces, 0.0084 grams  Marki ng: A16 SOT-23 Unit: inch(mm) Maximu m Ratings and Thermal Characteristi cs o (TA=25 C unless otherwise note d) PARAMETER Drain-Source Voltage Gat e-Source Voltage Continuou.


Pan Jit International PJA3416

s Drain Current Pulsed Drain Current Po wer Dissipation Ta=25oC Derate above 2 5oC Operating Junction and Storage Tem perature Range Typical Thermal resista nce - Junction to Ambient (Note 3) SYM BOL VDS VGS ID IDM PD TJ,TSTG RθJA LI MIT 20 +12 5.8 23.2 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W March 10,2014-REV.00 Page 1 PPJA3416 Elec trical Characteris.


Pan Jit International PJA3416

tics o (TA=25 C unless otherwise not ed) PARAMETER Static Drain-Source Brea kdown Voltage Gate Threshold Voltage Dr ain-Source On-State Resistance Zero Gat e Voltage Drain Current Gate-Source Lea kage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge In put Capacitance Output Capacitance Reve rse Transfer Capacitance Switching Turn -On Delay Time Tur.

Part

PJA3416

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3416 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 5.8A F eatures  RDS(ON) , VGS@4.5V, ID@5.8A <27mΩ  RDS(ON) , VGS@2.5V, ID@3.2A <40mΩ  RDS(ON) , VGS@1.8V, ID@1.6A <80mΩ  Advanced Trench Process Tec hnology  Specially Designed for Swit ch Load, PWM Application, etc..  Lea d free in compliance with EU RoHS 2011/ 65/EU directive.  Green molding com.
Manufacture

Pan Jit International

Datasheet
Download PJA3416 Datasheet




 PJA3416
PPJA3416
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V Current
5.8A
Features
RDS(ON) , VGS@4.5V, ID@5.8A<27m
RDS(ON) , VGS@2.5V, ID@3.2A<40m
RDS(ON) , VGS@1.8V, ID@1.6A<80m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc..
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A16
SOT-23
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
20
+12
5.8
23.2
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1




 PJA3416
PPJA3416
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=5.8A
VGS=2.5V, ID=3.2A
VGS=1.8V, ID=1.6A
VDS=20V, VGS=0V
VGS=+12V, VDS=0V
VDS=10V, ID=5.8A,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=5.8A,
VGS=4.5V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
20 - - V
0.5 0.77 1.2
V
- 23 27
- 32 40 mΩ
- 61 80
- 0.01 1
uA
- +10 +100 nA
- 6.7 -
- 1.2 -
-2-
- 513 -
- 75 -
- 59 -
nC
pF
-6-
ns
56
- 23 -
us
- 13 -
- - 1.5 A
- 0.71 1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2




 PJA3416
PPJA3416
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 10,2014-REV.00
Fig.6 Body Diode Characteristics
Page 3



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