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Mode MOSFET. PJA3419 Datasheet

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Mode MOSFET. PJA3419 Datasheet






PJA3419 MOSFET. Datasheet pdf. Equivalent




PJA3419 MOSFET. Datasheet pdf. Equivalent





Part

PJA3419

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3419 20V P-Channel Enhancement Mode MOSFET– ESD Protected Voltage -20 V Current -4.0A SOT-23 Features  RDS(ON) , VGS@-10V, ID@-4.0A<60mΩ RDS(ON) , VGS@-4.5V, ID@-3.3A<70mΩ  RDS(ON) , VGS@-2.5V, ID@-2.0A<96m  Advanced Trench Process Technolog y  Specially Designed for Switch Loa d, PWM Application, etc.  ESD Protec ted 2KV HBM  Lead free in compliance .
Manufacture

Pan Jit International

Datasheet
Download PJA3419 Datasheet


Pan Jit International PJA3419

PJA3419; with EU RoHS 2011/65/EU directive  Gr een molding compound as per IEC61249 St d. (Halogen Free) Mechanical Data  Case : SOT-23 Package  Terminals : S olderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0003 ounces, 0.0 084 grams  Marking : A19 Unit: inch (mm) Maximum Ratings and Thermal C haracteristics o (TA=25 C unless oth erwise noted) PARAMETER D.


Pan Jit International PJA3419

rain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta =25oC Derate above 25oC Operating Junc tion and Storage Temperature Range Typ ical Thermal resistance - Junction to A mbient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -20 +12 -4.0 -1 6 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W May.


Pan Jit International PJA3419

8,2015-REV.00 Page 1 PPJA3419 Electr ical Characteristics o (TA=25 C unle ss otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Th reshold Voltage Drain-Source On-State R esistance Zero Gate Voltage Drain Curre nt Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacita nce Output Capacit.

Part

PJA3419

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3419 20V P-Channel Enhancement Mode MOSFET– ESD Protected Voltage -20 V Current -4.0A SOT-23 Features  RDS(ON) , VGS@-10V, ID@-4.0A<60mΩ RDS(ON) , VGS@-4.5V, ID@-3.3A<70mΩ  RDS(ON) , VGS@-2.5V, ID@-2.0A<96m  Advanced Trench Process Technolog y  Specially Designed for Switch Loa d, PWM Application, etc.  ESD Protec ted 2KV HBM  Lead free in compliance .
Manufacture

Pan Jit International

Datasheet
Download PJA3419 Datasheet




 PJA3419
PPJA3419
20V P-Channel Enhancement Mode MOSFETESD Protected
Voltage
-20 V Current
-4.0A
SOT-23
Features
RDS(ON) , VGS@-10V, ID@-4.0A<60m
RDS(ON) , VGS@-4.5V, ID@-3.3A<70m
RDS(ON) , VGS@-2.5V, ID@-2.0A<96m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0003 ounces, 0.0084 grams
Marking : A19
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+12
-4.0
-16
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
May 8,2015-REV.00
Page 1




 PJA3419
PPJA3419
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-4.0A
VGS=-4.5V, ID=-3.3A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-0.5A
VDS=-20V, VGS=0V
VGS=+8V, VDS=0V
VDS=-10V, ID=-4.0A,
VGS=-4.5V (Note 1,2)
VDS=-10V, VGS=0V,
f=1.0MHZ
VDD=-10V, ID=-4.0A,
VGS=-4.5V,
RG=3Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-20 -
-
-0.5 -0.77 -1.2
- 50 60
- 58 70
- 80 96
- 140 180
- - -1
- - +10
V
V
mΩ
uA
uA
- 6.9 -
- 1.5 -
- 1.9 -
- 602 -
- 70 -
- 47 -
- 8.8 -
- 66 -
- 29 -
- 14 -
nC
pF
ns
- - -1.5 A
- -0.79 -1.0 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing
May 8,2015-REV.00
Page 2




 PJA3419
PPJA3419
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
May 8,2015-REV.00
Fig.6 Body Diode Characteristics
Page 3



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