N-Channel Enhancement Mode MOSFET
PPJA3432
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V
Current
1.6A
SOT-23
Features
RDS(O...
Description
PPJA3432
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V
Current
1.6A
SOT-23
Features
RDS(ON) , VGS@4,5V, ID@1.6A<200mΩ RDS(ON) , VGS@2.5V, ID@1.1A<270mΩ RDS(ON) , VGS@1.8V, ID@0.2A<570mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A32
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 30 +8 1.6 6.4 1.25 10
-55~150
100
UNITS V V A A W
mW/ oC oC
oC/W
January 22,2015-REV.02
Page 1
PPJA3432
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Ca...
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