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Mode MOSFET. PJA3432 Datasheet

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Mode MOSFET. PJA3432 Datasheet






PJA3432 MOSFET. Datasheet pdf. Equivalent




PJA3432 MOSFET. Datasheet pdf. Equivalent





Part

PJA3432

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3432 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 1.6A SOT-23 Features  RDS(ON) , VGS@4,5V, ID@1.6A<200mΩ RDS(ON) , VGS@2.5V, ID@1.1A<270mΩ RDS(ON) , VGS@1.8V, ID@0.2A<570mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protecte d 2KV HBM  Lead free in compliance wi.
Manufacture

Pan Jit International

Datasheet
Download PJA3432 Datasheet


Pan Jit International PJA3432

PJA3432; th EU RoHS 2011/65/EU directive.  Gre en molding compound as per IEC61249 Std . (Halogen Free) Mechanical Data  C ase: SOT-23 Package  Terminals : Sol derable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams  Marking: A32 Unit: inch(mm) Maximum Ratings and Thermal Chara cteristics o (TA=25 C unless otherwi se noted) PARAMETER Drain.


Pan Jit International PJA3432

-Source Voltage Gate-Source Voltage Cont inuous Drain Current Pulsed Drain Curre nt (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction a nd Storage Temperature Range Typical T hermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ, TSTG RθJA LIMIT 30 +8 1.6 6.4 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W January 22,2.


Pan Jit International PJA3432

015-REV.02 Page 1 PPJA3432 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Dra in-Source Breakdown Voltage Gate Thresh old Voltage Drain-Source On-State Resis tance Zero Gate Voltage Drain Current G ate-Source Leakage Current Dynamic (Not e 5) Total Gate Charge Gate-Source Char ge Gate-Drain Charge Input Capacitance Output Capacitance.

Part

PJA3432

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3432 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 1.6A SOT-23 Features  RDS(ON) , VGS@4,5V, ID@1.6A<200mΩ RDS(ON) , VGS@2.5V, ID@1.1A<270mΩ RDS(ON) , VGS@1.8V, ID@0.2A<570mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protecte d 2KV HBM  Lead free in compliance wi.
Manufacture

Pan Jit International

Datasheet
Download PJA3432 Datasheet




 PJA3432
PPJA3432
30V N-Channel Enhancement Mode MOSFET ESD Protected
Voltage
30 V
Current
1.6A
SOT-23
Features
RDS(ON) , VGS@4,5V, ID@1.6A<200m
RDS(ON) , VGS@2.5V, ID@1.1A<270m
RDS(ON) , VGS@1.8V, ID@0.2A<570m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A32
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+8
1.6
6.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
January 22,2015-REV.02
Page 1




 PJA3432
PPJA3432
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=1.6A
VGS=2.5V, ID=1.1A
VGS=1.8V, ID=0.2A
VDS=30V, VGS=0V
VGS=+8V, VDS=0V
VDS=15V, ID=1.6A,
VGS=4.5V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=15V, ID=1.6A,
VGS=4.5V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
30 - - V
0.5 0.78 1.3
V
- 145 200
- 185 270 mΩ
- 330 570
- 0.01 1
uA
- 1.4 +10 uA
- 1.5 -
- 0.3 - nC
- 0.3 -
- 93 -
- 19 - pF
-6-
- 6.4 -
- 33 -
ns
- 37 -
- 32 -
- - 1.0 A
- 0.81 1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
January 22,2015-REV.02
Page 2




 PJA3432
PPJA3432
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
January 22,2015-REV.02
Fig.6 Body Diode Characteristics
Page 3



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