DatasheetsPDF.com

Mode MOSFET. PJA3433 Datasheet

DatasheetsPDF.com

Mode MOSFET. PJA3433 Datasheet






PJA3433 MOSFET. Datasheet pdf. Equivalent




PJA3433 MOSFET. Datasheet pdf. Equivalent





Part

PJA3433

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3433 30V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -30 V Current -1.1A SOT-23 Features RDS(ON) , VGS@-4.5V, ID@-1.1A<370mΩ  RDS(ON) , VGS@-2.5V, ID@-0.5A<540m Ω  RDS(ON) , VGS@-2.5V, ID@-0.1A<9 70mΩ  Advanced Trench Process Tech nology  Specially Designed for Switc h Load, PWM Application, etc.  ESD P rotected 2KV HBM  Lead free in compli.
Manufacture

Pan Jit International

Datasheet
Download PJA3433 Datasheet


Pan Jit International PJA3433

PJA3433; ance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61 249 Std. (Halogen Free) Mechanical Data  Case : SOT-23 Package  Termina ls : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0003 ounce s, 0.0084 grams  Marking : A33 Unit : inch(mm) Maximum Ratings and Ther mal Characteristics o (TA=25 C unles s otherwise noted) PARAME.


Pan Jit International PJA3433

TER Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current Pulsed D rain Current (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -30 +8 -1.1 -4.4 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W .


Pan Jit International PJA3433

January 22,2015-REV.01 Page 1 PPJA343 3 Electrical Characteristics o (TA=2 5 C unless otherwise noted) PARAMET ER Static Drain-Source Breakdown Voltag e Gate Threshold Voltage Drain-Source O n-State Resistance Zero Gate Voltage Dr ain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gat e-Source Charge Gate-Drain Charge Input Capacitance Outpu.

Part

PJA3433

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3433 30V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -30 V Current -1.1A SOT-23 Features RDS(ON) , VGS@-4.5V, ID@-1.1A<370mΩ  RDS(ON) , VGS@-2.5V, ID@-0.5A<540m Ω  RDS(ON) , VGS@-2.5V, ID@-0.1A<9 70mΩ  Advanced Trench Process Tech nology  Specially Designed for Switc h Load, PWM Application, etc.  ESD P rotected 2KV HBM  Lead free in compli.
Manufacture

Pan Jit International

Datasheet
Download PJA3433 Datasheet




 PJA3433
PPJA3433
30V P-Channel Enhancement Mode MOSFET ESD Protected
Voltage
-30 V Current
-1.1A
SOT-23
Features
RDS(ON) , VGS@-4.5V, ID@-1.1A<370m
RDS(ON) , VGS@-2.5V, ID@-0.5A<540m
RDS(ON) , VGS@-2.5V, ID@-0.1A<970m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0003 ounces, 0.0084 grams
Marking : A33
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-30
+8
-1.1
-4.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
January 22,2015-REV.01
Page 1




 PJA3433
PPJA3433
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-4.5V, ID=-1.1A
VGS=-2.5V, ID=-0.5A
VGS=-1.8V, ID=-0.1A
VDS=-30V, VGS=0V
VGS=+8V, VDS=0V
VDS=-15V, ID=-1.1A,
VGS=-4.5V (Note 1,2)
VDS=-15V, VGS=0V,
f=1.0MHZ
VDD=-15V, ID=-1.1A,
VGS=-4.5V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-30 -
-
-0.5 -0.98 -1.3
- 293 370
- 387 540
- 750 970
-
-0.01
-1
- +3.4 +10
V
V
mΩ
uA
uA
- 1.6 -
- 0.5 -
- 0.3 -
- 125 -
- 22 -
-6-
- 11 -
- 51 -
- 65 -
- 46 -
nC
pF
ns
- - -1.0 A
- -0.9 -1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
January 22,2015-REV.01
Page 2




 PJA3433
PPJA3433
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
January 22,2015-REV.01
Fig.6 Body Diode Characteristics
Page 3



Recommended third-party PJA3433 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)