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Mode MOSFET. PJA3438 Datasheet

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Mode MOSFET. PJA3438 Datasheet






PJA3438 MOSFET. Datasheet pdf. Equivalent




PJA3438 MOSFET. Datasheet pdf. Equivalent





Part

PJA3438

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3438 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V Current 500mA SOT-23 Features  RDS(ON) , VGS@10V, ID@500mA<1.45Ω RDS(ON) , VGS@4.5V, ID@200mA<1.95Ω  RDS(ON) , VGS@2.5V, ID@100mA<4.0Ω  RDS(ON) , VGS@1.8V, ID@10mA<4.0Ω (typ.)  Advanced Trench Process Tech nology  ESD Protected 2KV HBM  Sp ecially Designed for Relay driver, Speed l.
Manufacture

Pan Jit International

Datasheet
Download PJA3438 Datasheet


Pan Jit International PJA3438

PJA3438; ine drive, etc.  Lead free in complia nce with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61 249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Terminal s: Solderable per MIL-STD-750, Method 2 026  Approx. Weight: 0.0003 ounces, 0.0084 grams  Marking: A38 Unit : i nch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C .


Pan Jit International PJA3438

unless otherwise noted) PARAMETER D rain-Source Voltage Gate-Source Voltag e Continuous Drain Current Pulsed Dra in Current Power Dissipation TA=25oC D erate above 25oC Operating Junction an d Storage Temperature Range Typical Th ermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,T STG RθJA LIMIT 50 +20 500 1200 500 4 -55~150 250 UNITS .


Pan Jit International PJA3438

V V mA mA mW mW/ oC oC oC/W June 17,201 5-REV.00 Page 1 PPJA3438 Electrical Characteristics o (TA=25 C unless o therwise noted) PARAMETER Static Drai n-Source Breakdown Voltage Gate Thresho ld Voltage Drain-Source On-State Resist ance Zero Gate Voltage Drain Current Ga te-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charg e Gate-Drain Charg.

Part

PJA3438

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3438 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V Current 500mA SOT-23 Features  RDS(ON) , VGS@10V, ID@500mA<1.45Ω RDS(ON) , VGS@4.5V, ID@200mA<1.95Ω  RDS(ON) , VGS@2.5V, ID@100mA<4.0Ω  RDS(ON) , VGS@1.8V, ID@10mA<4.0Ω (typ.)  Advanced Trench Process Tech nology  ESD Protected 2KV HBM  Sp ecially Designed for Relay driver, Speed l.
Manufacture

Pan Jit International

Datasheet
Download PJA3438 Datasheet




 PJA3438
PPJA3438
50V N-Channel Enhancement Mode MOSFET ESD Protected
Voltage
50 V
Current 500mA
SOT-23
Features
RDS(ON) , VGS@10V, ID@500mA<1.45
RDS(ON) , VGS@4.5V, ID@200mA<1.95
RDS(ON) , VGS@2.5V, ID@100mA<4.0
RDS(ON) , VGS@1.8V, ID@10mA<4.0(typ.)
Advanced Trench Process Technology
ESD Protected 2KV HBM
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A38
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
50
+20
500
1200
500
4
-55~150
250
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
June 17,2015-REV.00
Page 1




 PJA3438
PPJA3438
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V,ID=250uA
VDS=VGS, ID=250uA
VGS=10V,ID=500mA
VGS=4.5V,ID=200mA
VGS=2.5V,ID=100mA
VGS=1.8V,ID=10mA
VDS=50V,VGS=0V
VGS=+20V,VDS=0V
VDS=25V, ID=500mA,
VGS=4.5V
VDS=25V, VGS=0V,
f=1.0MHZ
VDD=25V, ID=500mA,
VGS=10V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=500mA, VGS=0V
MIN. TYP. MAX. UNITS
50 - - V
0.5 0.86 1.0
V
- 1.2 1.45
-
1.3 1.95
Ω
- 1.7 4.0
- 4.0 -
- - 1 uA
- - +10 uA
- 0.95 -
- 0.34 -
- 0.32 -
- 36 -
- 11 -
- 6.6 -
- 2.3 -
- 20 -
-7-
- 20 -
nC
pF
ns
- - 500 mA
- 0.9 1.5 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
4. Guaranteed by design, not subject to production testing
June 17,2015-REV.00
Page 2




 PJA3438
PPJA3438
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
June 17,2015-REV.00
Fig.6 Body Diode Characteristics
Page 3



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