PPJA3439
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current -300mA
Features
RDS(ON) , VGS@-10V, ID@-500m...
PPJA3439
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current -300mA
Features
RDS(ON) , VGS@-10V, ID@-500mA<4Ω RDS(ON) ,
[email protected], ID@-200mA<6Ω RDS(ON) ,
[email protected], ID@-50mA<13Ω Advanced Trench Process Technology Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A39
SOT-23
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation
TA=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -60 +20 -300
-1000 500
4 -55~150
250
UNITS V V mA mA
mW mW/ oC
oC
oC/W
July 21,2015-REV.00
Page 1
PPJA3439
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static (Note 1) Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Tur...