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Mode MOSFET. PJA3439 Datasheet

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Mode MOSFET. PJA3439 Datasheet






PJA3439 MOSFET. Datasheet pdf. Equivalent




PJA3439 MOSFET. Datasheet pdf. Equivalent





Part

PJA3439

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3439 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -300mA Features  RDS(ON) , VGS@-10V, ID@- 500mA<4Ω  RDS(ON) , VGS@-4.5V, ID@ -200mA<6Ω  RDS(ON) , VGS@-2.5V, ID @-50mA<13Ω  Advanced Trench Proces s Technology  Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU directive.  Green moldi.
Manufacture

Pan Jit International

Datasheet
Download PJA3439 Datasheet


Pan Jit International PJA3439

PJA3439; ng compound as per IEC61249 Std. (Haloge n Free) Mechanical Data  Case: SOT- 23 Package  Terminals: Solderable pe r MIL-STD-750, Method 2026  Approx. Weight: 0.0003 ounces, 0.0084 grams  Marking: A39 SOT-23 Unit : inch(mm) Maximum Ratings and Thermal Charac teristics o (TA=25 C unless otherwis e noted) PARAMETER Drain-Source Volt age Gate-Source Voltage .


Pan Jit International PJA3439

Continuous Drain Current Pulsed Drain C urrent Power Dissipation TA=25oC Derat e above 25oC Operating Junction and St orage Temperature Range Typical Therma l resistance - Junction to Ambient (Not e 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -60 +20 -300 -1000 500 4 - 55~150 250 UNITS V V mA mA mW mW/ oC o C oC/W July 21,2015-REV.00 Page 1 PP JA3439 Electrical .


Pan Jit International PJA3439

Characteristics o (TA=25 C unless ot herwise noted) PARAMETER Static (Note 1) Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-Stat e Resistance Zero Gate Voltage Drain Cu rrent Gate-Source Leakage Current Dynam ic (Note 4) Total Gate Charge Gate-Sour ce Charge Gate-Drain Charge Input Capac itance Output Capacitance Reverse Trans fer Capacitance Tu.

Part

PJA3439

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3439 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -300mA Features  RDS(ON) , VGS@-10V, ID@- 500mA<4Ω  RDS(ON) , VGS@-4.5V, ID@ -200mA<6Ω  RDS(ON) , VGS@-2.5V, ID @-50mA<13Ω  Advanced Trench Proces s Technology  Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU directive.  Green moldi.
Manufacture

Pan Jit International

Datasheet
Download PJA3439 Datasheet




 PJA3439
PPJA3439
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current -300mA
Features
RDS(ON) , VGS@-10V, ID@-500mA<4
RDS(ON) , VGS@-4.5V, ID@-200mA<6
RDS(ON) , VGS@-2.5V, ID@-50mA<13
Advanced Trench Process Technology
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A39
SOT-23
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-60
+20
-300
-1000
500
4
-55~150
250
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
July 21,2015-REV.00
Page 1




 PJA3439
PPJA3439
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static (Note 1)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V,ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V,ID=-500mA
VGS=-4.5V,ID=-200mA
VGS=-2.5V,ID=-50mA
VDS=-48V,VGS=0V
VGS=+20V,VDS=0V
VDS=-25V, ID=-100mA,
VGS=-4.5V
VDS=-25V, VGS=0V,
f=1.0MHZ
VDD=-25V, ID=-100mA,
VGS=-10V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=-500mA, VGS=0V
MIN.
-60
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-1.5
2.4
2.65
4.5
-
-
1.1
0.3
0.2
51
15
2.2
4.8
19
52
32
-
-0.95
MAX. UNITS
-
-2.5
4
6
13
-1
+100
V
V
Ω
uA
nA
-
- nC
-
-
- pF
-
-
-
ns
-
-
-300
-1.3
mA
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
4. Guaranteed by design, not subject to production testing
July 21,2015-REV.00
Page 2




 PJA3439
PPJA3439
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
July 21,2015-REV.00
Fig.6 Body Diode Characteristics
Page 3



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