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PJA3439

Pan Jit International

P-Channel Enhancement Mode MOSFET

PPJA3439 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -300mA Features  RDS(ON) , VGS@-10V, ID@-500m...


Pan Jit International

PJA3439

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PPJA3439 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -300mA Features  RDS(ON) , VGS@-10V, ID@-500mA<4Ω  RDS(ON) , [email protected], ID@-200mA<6Ω  RDS(ON) , [email protected], ID@-50mA<13Ω  Advanced Trench Process Technology  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0003 ounces, 0.0084 grams  Marking: A39 SOT-23 Unit : inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -60 +20 -300 -1000 500 4 -55~150 250 UNITS V V mA mA mW mW/ oC oC oC/W July 21,2015-REV.00 Page 1 PPJA3439 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static (Note 1) Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Tur...




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