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Mode MOSFET. PJA3460 Datasheet

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Mode MOSFET. PJA3460 Datasheet






PJA3460 MOSFET. Datasheet pdf. Equivalent




PJA3460 MOSFET. Datasheet pdf. Equivalent





Part

PJA3460

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3460 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 2.5 A Features  RDS(ON) , VGS@10V, ID@2.0A <75mΩ  RDS(ON) , VGS@4.5V, ID@1.0A <90mΩ  Advanced Trench Process Tec hnology  Specially Designed for Swit ch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/65 /EU directive.  Green molding compou nd as per IEC61249 Std. (Halogen F.
Manufacture

Pan Jit International

Datasheet
Download PJA3460 Datasheet


Pan Jit International PJA3460

PJA3460; ree) Mechanical Data  Case: SOT-23 Pa ckage  Terminals : Solderable per MI L-STD-750, Method 2026  Approx. Weig ht: 0.0003 ounces, 0.0084 grams  Mar king: A60 SOT-23 Unit: inch(mm) Maxi mum Ratings and Thermal Characteris tics o (TA=25 C unless otherwise no ted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain C urrent Pulsed Drain Curren.


Pan Jit International PJA3460

t (Note 4) Power Dissipation Ta=25oC De rate above 25oC Operating Junction and Storage Temperature Range Typical The rmal resistance - Junction to Ambient ( Note 3) SYMBOL VDS VGS ID IDM PD TJ,TS TG RθJA LIMIT 60 +20 2.5 10 1.25 10 - 55~150 100 UNITS V V A A W mW/ oC oC o C/W August 3,2015-REV.00 Page 1 PPJA 3460 Electrical Characteristics o (T A=25 C unless oth.


Pan Jit International PJA3460

erwise noted) PARAMETER Static Drain-S ource Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistanc e Zero Gate Voltage Drain Current Gate- Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge G ate-Drain Charge Input Capacitance Outp ut Capacitance Reverse Transfer Capacit ance Turn-On Delay Time Turn-On Rise Ti me Turn-Off Delay .

Part

PJA3460

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3460 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 2.5 A Features  RDS(ON) , VGS@10V, ID@2.0A <75mΩ  RDS(ON) , VGS@4.5V, ID@1.0A <90mΩ  Advanced Trench Process Tec hnology  Specially Designed for Swit ch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/65 /EU directive.  Green molding compou nd as per IEC61249 Std. (Halogen F.
Manufacture

Pan Jit International

Datasheet
Download PJA3460 Datasheet




 PJA3460
PPJA3460
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V Current
2.5 A
Features
RDS(ON) , VGS@10V, ID@2.0A<75m
RDS(ON) , VGS@4.5V, ID@1.0A<90m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A60
SOT-23
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
60
+20
2.5
10
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
August 3,2015-REV.00
Page 1




 PJA3460
PPJA3460
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=10V, ID=2.0A
VGS=4.5V, ID=1.0A
VDS=48V, VGS=0V
VGS=+20V, VDS=0V
VDS=48V, ID=2.0A,
VGS=10V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=30V, ID=2.0A,
VGS=10V,
RG=3.3Ω (Note 1,2)
---
MIN. TYP. MAX. UNITS
60 - - V
1.0 1.75 2.5
V
- 55 75
mΩ
- 63 90
- - 1 uA
- - +100 nA
- 9.3 -
- 2.2 -
- 1.9 -
- 509 -
- 47 -
- 23 -
- 3.2 -
- 9.7 -
- 18.5 -
- 6.4 -
nC
pF
ns
- - 2.5 A
Diode Forward Voltage
VSD IS=1A, VGS=0V
- 0.77 1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
August 3,2015-REV.00
Page 2




 PJA3460
PPJA3460
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
August 3,2015-REV.00
Fig.6 Body Diode Characteristics
Page 3



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