PJA3460

PPJA3460 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 2.5 A Features  RDS(ON) , VGS@10V, [email protected]<75mΩ  RDS(ON) , [email protected], [email protected]<90mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0003 ounces, 0.0084 grams  Marking: A60 SOT-23 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 60 +20 2.5 10 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W August 3,2015-REV.00 Page 1 PPJA3460 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall T...