PPJA3476
100V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
100 V Current 300mA
SOT-23
Features
RDS(...
PPJA3476
100V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
100 V Current 300mA
SOT-23
Features
RDS(ON) , VGS@10V, ID@300mA<6Ω RDS(ON) ,
[email protected], ID@200mA<9Ω Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU
directive. ESD Protected 2KV HBM Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A76
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 100 +20 300 800 500
4 -55~150
250
UNITS V V mA mA
mW mW/ oC
oC
oC/W
June 10,2015-REV.00
Page 1
PPJA3476
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Ri...