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Mode MOSFET. PJS6401 Datasheet

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Mode MOSFET. PJS6401 Datasheet






PJS6401 MOSFET. Datasheet pdf. Equivalent




PJS6401 MOSFET. Datasheet pdf. Equivalent





Part

PJS6401

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJS6401 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, ID@- 4.6A<71mΩ  RDS(ON) , VGS@-4.5V, ID @-3.3A<81mΩ  RDS(ON) , VGS@-2.5V, ID@-1.8A<110mΩ  Advanced Trench Pr ocess Technology  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance with EU RoH S 2011/65/EU directive.  Green mold.
Manufacture

Pan Jit International

Datasheet
Download PJS6401 Datasheet


Pan Jit International PJS6401

PJS6401; ing compound as per IEC61249 Std. (Halog en Free) Mechanical Data  Case: SOT -23 6L-1 Package  Terminals: Soldera ble per MIL-STD-750, Method 2026  Ap prox. Weight: 0.0005 ounces, 0.014 gram s  Marking: S01 SOT-23 6L-1 Unit : inch(mm) Maximum Ratings and Therm al Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-S ource Voltage Gate-Source.


Pan Jit International PJS6401

Voltage Continuous Drain Current Puls ed Drain Current Power Dissipation Ta= 25oC Derate above 25oC Operating Junct ion and Storage Temperature Range Typi cal Thermal resistance - Junction to Am bient (Note 3) SYMBOL VDS VGS ID IDM P D TJ,TSTG RθJA LIMIT -30 +12 -4.6 -18 .4 2 16 -55~150 62.5 UNITS V V A A W m W/ oC oC oC/W December 31,2014-REV.03 Page 1 PPJS6401 .


Pan Jit International PJS6401

Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER S tatic Drain-Source Breakdown Voltage Ga te Threshold Voltage Drain-Source On-St ate Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dyn amic Total Gate Charge Gate-Source Char ge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Cap acitance Switching.

Part

PJS6401

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJS6401 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, ID@- 4.6A<71mΩ  RDS(ON) , VGS@-4.5V, ID @-3.3A<81mΩ  RDS(ON) , VGS@-2.5V, ID@-1.8A<110mΩ  Advanced Trench Pr ocess Technology  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance with EU RoH S 2011/65/EU directive.  Green mold.
Manufacture

Pan Jit International

Datasheet
Download PJS6401 Datasheet




 PJS6401
PPJS6401
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-4.6A
Features
RDS(ON) , VGS@-10V, ID@-4.6A<71m
RDS(ON) , VGS@-4.5V, ID@-3.3A<81m
RDS(ON) , VGS@-2.5V, ID@-1.8A<110m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: S01
SOT-23 6L-1
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-30
+12
-4.6
-18.4
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
December 31,2014-REV.03
Page 1




 PJS6401
PPJS6401
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-4.6A
VGS=-4.5V, ID=-3.3A
VGS=-2.5V, ID=-1.8A
VDS=-30V, VGS=0V
VGS=+12V, VDS=0V
VDS=-15V, ID=-4.6A,
VGS=-10V (Note 1,2)
VDS=-15V, VGS=0V,
f=1.0MHZ
VDD=-15V, ID=-4.6A,
VGS=-10V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-30 -
-
-0.5 -0.96 -1.3
- 60 71
- 67 81
V
V
mΩ
- 84 110
-
-0.01
-1
uA
- +10 +100 nA
- 15.5 -
- 1.5 -
- 2.2 -
- 637 -
- 50 -
- 35 -
nC
pF
-3-
- 43 -
- 224 -
- 101 -
ns
- - -2.0 A
-0.75 -1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
December 31,2014-REV.03
Page 2




 PJS6401
PPJS6401
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
December 31,2014-REV.03
Fig.6 Body Dlode Characterlslcs
Page 3



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