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Mode MOSFET. PJS6404 Datasheet

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Mode MOSFET. PJS6404 Datasheet






PJS6404 MOSFET. Datasheet pdf. Equivalent




PJS6404 MOSFET. Datasheet pdf. Equivalent





Part

PJS6404

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJS6404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.8A F eatures  RDS(ON) , VGS@10V, ID@6.8A< 32mΩ  RDS(ON) , VGS@4.5V,ID@4.3A<4 7mΩ  Advanced Trench Process Techn ology  Specially Designed for Switch Load, PWM Application, etc..  Lead free in compliance with EU RoHS 2011/65 /EU directive.  Green molding compou nd as per IEC61249 Std. (Halogen F.
Manufacture

Pan Jit International

Datasheet
Download PJS6404 Datasheet


Pan Jit International PJS6404

PJS6404; ree) Mechanical Data  Case: SOT-23 6L -1 Package  Terminals: Solderable pe r MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.014 grams  Marking: S04 SOT-23 6L-1 Unit : inch( mm) Maximum Ratings and Thermal Ch aracteristics o (TA=25 C unless othe rwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuou s Drain Current Pulsed Dr.


Pan Jit International PJS6404

ain Current Power Dissipation Ta=25oC D erate above 25oC Operating Junction an d Storage Temperature Range Typical Th ermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,T STG RθJA LIMIT 30 +20 6.8 27.2 2 16 - 55~150 62.5 UNITS V V A A W mW/ oC oC oC/W December 17,2014-REV.03 Page 1 PPJS6404 Electrical Characteristics o (TA=25 C unless .


Pan Jit International PJS6404

otherwise noted) PARAMETER Static Dra in-Source Breakdown Voltage Gate Thresh old Voltage Drain-Source On-State Resis tance Zero Gate Voltage Drain Current G ate-Source Leakage Current Dynamic Tota l Gate Charge Gate-Source Charge Gate-D rain Charge Input Capacitance Output Ca pacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Ri se Time Turn-Off D.

Part

PJS6404

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJS6404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.8A F eatures  RDS(ON) , VGS@10V, ID@6.8A< 32mΩ  RDS(ON) , VGS@4.5V,ID@4.3A<4 7mΩ  Advanced Trench Process Techn ology  Specially Designed for Switch Load, PWM Application, etc..  Lead free in compliance with EU RoHS 2011/65 /EU directive.  Green molding compou nd as per IEC61249 Std. (Halogen F.
Manufacture

Pan Jit International

Datasheet
Download PJS6404 Datasheet




 PJS6404
PPJS6404
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V Current
6.8A
Features
RDS(ON) , VGS@10V, ID@6.8A<32m
RDS(ON) , VGS@4.5V,ID@4.3A<47m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc..
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: S04
SOT-23 6L-1
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+20
6.8
27.2
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
December 17,2014-REV.03
Page 1




 PJS6404
PPJS6404
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=10V, ID=6.8A
VGS=4.5V, ID=4.3A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
VDS=15V, ID=6.8A,
VGS=10V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=15V, ID=6.8A,
VGS=10V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
30 - - V
1.0 1.4 2.1
V
- 26 32
mΩ
- 38 47
- 0.01 1
uA
- +10 +100 nA
- 7.8 -
- 1.2 -
- 1.5 -
- 343 -
- 48 -
- 34 -
nC
pF
- 3.1 -
40 -
ns
38 -
- 39 -
- - 2.0 A
0.75 1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
December 17,2014-REV.03
Page 2




 PJS6404
PPJS6404
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
December 17,2014-REV.03
Fig.6 Body Diode Characteristics
Page 3



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