DatasheetsPDF.com

Mode MOSFET. PJS6405 Datasheet

DatasheetsPDF.com

Mode MOSFET. PJS6405 Datasheet






PJS6405 MOSFET. Datasheet pdf. Equivalent




PJS6405 MOSFET. Datasheet pdf. Equivalent





Part

PJS6405

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJS6405 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, ID@- 4.6A<72mΩ  RDS(ON) , VGS@-4.5V, ID @-3.0A<96mΩ  Advanced Trench Proce ss Technology  Specially Designed fo r Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2 011/65/EU directive.  Green molding compound as per IEC61249 Std. (Hal.
Manufacture

Pan Jit International

Datasheet
Download PJS6405 Datasheet


Pan Jit International PJS6405

PJS6405; ogen Free) Mechanical Data  Case: SO T-23 6L-1 Package  Terminals: Solder able per MIL-STD-750, Method 2026  A pprox. Weight: 0.0005 ounces, 0.014 gra ms  Marking: S05 SOT-23 6L-1 Unit :inch(mm) Maximum Ratings and Therm al Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-S ource Voltage Gate-Source Voltage Con tinuous Drain Current Pul.


Pan Jit International PJS6405

sed Drain Current Power Dissipation Ta= 25oC Derate above 25oC Operating Junct ion and Storage Temperature Range Typi cal Thermal resistance - Junction to Am bient (Note 3) SYMBOL VDS VGS ID IDM P D TJ,TSTG RθJA LIMIT -30 +20 -4.6 -18 .4 2 16 -55~150 62.5 UNITS V V A A W m W/ oC oC oC/W December 31,2014-REV.03 Page 1 PPJS6405 Electrical Characte ristics o (TA=25 C.


Pan Jit International PJS6405

unless otherwise noted) PARAMETER S tatic Drain-Source Breakdown Voltage Ga te Threshold Voltage Drain-Source On-St ate Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dyn amic Total Gate Charge Gate-Source Char ge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Cap acitance Switching Turn-On Delay Time T urn-On Rise Time T.

Part

PJS6405

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJS6405 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, ID@- 4.6A<72mΩ  RDS(ON) , VGS@-4.5V, ID @-3.0A<96mΩ  Advanced Trench Proce ss Technology  Specially Designed fo r Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2 011/65/EU directive.  Green molding compound as per IEC61249 Std. (Hal.
Manufacture

Pan Jit International

Datasheet
Download PJS6405 Datasheet




 PJS6405
PPJS6405
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-4.6A
Features
RDS(ON) , VGS@-10V, ID@-4.6A<72m
RDS(ON) , VGS@-4.5V, ID@-3.0A<96m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: S05
SOT-23 6L-1
Unit :inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-30
+20
-4.6
-18.4
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
December 31,2014-REV.03
Page 1




 PJS6405
PPJS6405
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-4.6A
VGS=-4.5V, ID=-3.0A
VDS=-30V, VGS=0V
VGS=+20V, VDS=0V
VDS=-15V, ID=-4.6A,
VGS=-10V (Note 1,2)
VDS=-15V, VGS=0V,
f=1.0MHZ
VDD=-15V, ID=-4.6A,
VGS=-10V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-30 -
-
-1 -1.38 -2.1
- 61 72
- 78 96
V
V
mΩ
-
-0.01
-1
uA
- +10 +100 nA
- 5.2 -
- 1.3 -
- 1.9 -
- 417 -
- 50 -
- 36 -
nC
pF
- 3.5 -
- 34 -
- 120 -
- 71 -
ns
- - -2.0 A
- -0.74 -1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
December 31,2014-REV.03
Page 2




 PJS6405
PPJS6405
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
December 31,2014-REV.03
Fig.6 Body Dlode Characterlslcs
Page 3



Recommended third-party PJS6405 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)