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Mode MOSFET. PJS6600 Datasheet

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Mode MOSFET. PJS6600 Datasheet






PJS6600 MOSFET. Datasheet pdf. Equivalent




PJS6600 MOSFET. Datasheet pdf. Equivalent





Part

PJS6600

Description

Complementary Enhancement Mode MOSFET



Feature


PPJS6600 30V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 30 / -30V Current 1.6 /-1.1A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU dire ctive  Green molding compound as per IEC61249 Std. (Halogen Free) .
Manufacture

Pan Jit International

Datasheet
Download PJS6600 Datasheet


Pan Jit International PJS6600

PJS6600; Mechanical Data  Case: SOT-23 6L Pac kage  Terminals: Solderable per MIL- STD-750, Method 2026  Approx. Weight : 0.0005 ounces, 0.014 grams  Markin g: SC0 Unit: inch(mm) Maximum Rating s and Thermal Characteristics o (TA =25 C unless otherwise noted) PARAM ETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Puls ed Drain Current (Note 4) .


Pan Jit International PJS6600

Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Te mperature Range Typical Thermal resist ance - Junction to Ambient (Note 3) SY MBOL N-Ch LIMIT P-Ch LIMIT VDS 30 -30 VGS +8 +8 ID 1.6 -1.1 IDM 6.4 -4.4 1.25 PD 10 TJ,TSTG -55~150 RθJA 100 UNITS V V A A W mW/ oC oC oC/W Ja nuary 22,2015-REV.03 Page 1 PPJS6600 N-Channel Electri.


Pan Jit International PJS6600

cal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static D rain-Source Breakdown Voltage Gate Thre shold Voltage Drain-Source On-State Res istance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (N ote 5) Total Gate Charge Gate-Source Ch arge Gate-Drain Charge Input Capacitanc e Output Capacitance Reverse Transfer C apacitance Turn-On.

Part

PJS6600

Description

Complementary Enhancement Mode MOSFET



Feature


PPJS6600 30V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 30 / -30V Current 1.6 /-1.1A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU dire ctive  Green molding compound as per IEC61249 Std. (Halogen Free) .
Manufacture

Pan Jit International

Datasheet
Download PJS6600 Datasheet




 PJS6600
PPJS6600
30V Complementary Enhancement Mode MOSFET ESD Protected
Voltage 30 / -30V Current 1.6 /-1.1A
SOT-23 6L
Features
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: SC0
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL N-Ch LIMIT P-Ch LIMIT
VDS 30
-30
VGS +8
+8
ID 1.6 -1.1
IDM 6.4 -4.4
1.25
PD
10
TJ,TSTG
-55~150
RθJA
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
January 22,2015-REV.03
Page 1




 PJS6600
PPJS6600
N-Channel
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
VSD
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=1.6A
VGS=2.5V, ID=1.1A
VGS=1.8V, ID=0.2A
VDS=30V, VGS=0V
VGS=+8V, VDS=0V
VDS=15V, ID=1.6A,
VGS=4.5V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=15V, ID=1.6A,
VGS=4.5V,
RG=6Ω (Note 1,2)
---
IS= 1.0A, VGS=0V
MIN. TYP. MAX. UNITS
30 -
-V
0.5 0.78 1.3
V
- 145 200
- 185 270 mΩ
- 330 570
- 0.01 1
uA
- 1.4 +10 uA
- 1.5 -
- 0.3 - nC
- 0.3 -
- 93 -
- 19 - pF
-6-
- 6.4 -
- 33 -
ns
- 37 -
- 32 -
- - 1.0 A
-
0.81
1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing
January 22,2015-REV.03
Page 2




 PJS6600
PPJS6600
P-Channel
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
VSD
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-4.5V, ID=-1.1A
VGS=-2.5V, ID=-0.5A
VGS=-1.8V, ID=-0.1A
VDS=-30V, VGS=0V
VGS=+8V, VDS=0V
VDS=-15V, ID=-1.1A,
VGS=-4.5V (Note 1,2)
VDS=-15V, VGS=0V,
f=1.0MHZ
VDD=-15V, ID=-1.1A,
VGS=-4.5V,
RG=6Ω (Note 1,2)
---
IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-30 -
-
-0.5 -0.98 -1.3
- 293 370
- 387 540
- 750 970
-
-0.01
-1
- +3.4 +10
V
V
mΩ
uA
uA
- 1.6 -
- 0.5 - nC
- 0.3 -
- 125 -
- 22 - pF
-6-
- 11 -
- 51 -
ns
- 65 -
- 46 -
- - -1.0 A
-
-0.9 -1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
January 22,2015-REV.03
Page 3



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