Complementary Enhancement Mode MOSFET
PPJS6600
30V Complementary Enhancement Mode MOSFET – ESD Protected
Voltage 30 / -30V Current 1.6 /-1.1A
SOT-23 6L
Fe...
Description
PPJS6600
30V Complementary Enhancement Mode MOSFET – ESD Protected
Voltage 30 / -30V Current 1.6 /-1.1A
SOT-23 6L
Features
Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU
directive Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: SC0
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL N-Ch LIMIT P-Ch LIMIT
VDS 30
-30
VGS +8
+8
ID 1.6 -1.1
IDM 6.4 -4.4
1.25 PD
10
TJ,TSTG
-55~150
RθJA
100
UNITS V V A A W
mW/ oC oC
oC/W
January 22,2015-REV.03
Page 1
PPJS6600
N-Channel
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On ...
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