PJS6601

PPJS6601 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 4.1 /-3.1A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.014 grams  Marking: SC1 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient (Note 3) SYMBOL N-Ch LIMIT P-Ch LIMIT VDS 20 -20 VGS +12 +12 ID 4.1 -3.1 IDM 16.4 -12.4 1.25 PD 10 TJ,TSTG -55~150 RθJA 100 UNITS V V A A W mW/ oC oC oC/W September 18,2015-REV.00 Page 1 PPJS6601 N-Channel Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn...