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Mode MOSFET. PJS6601 Datasheet

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Mode MOSFET. PJS6601 Datasheet






PJS6601 MOSFET. Datasheet pdf. Equivalent




PJS6601 MOSFET. Datasheet pdf. Equivalent





Part

PJS6601

Description

Complementary Enhancement Mode MOSFET



Feature


PPJS6601 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 4.1 /-3.1A SOT-23 6L Features  Ad vanced Trench Process Technology  Sp ecially Designed for Switch Load, PWM A pplication, etc.  Lead free in compl iance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC6 1249 Std. (Halogen Free) Mechanical Da ta  Case: SOT-23 6L Packa.
Manufacture

Pan Jit International

Datasheet
Download PJS6601 Datasheet


Pan Jit International PJS6601

PJS6601; ge  Terminals: Solderable per MIL-STD -750, Method 2026  Approx. Weight: 0 .0005 ounces, 0.014 grams  Marking: SC1 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETE R Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipatio n Ta=25oC Derate above .


Pan Jit International PJS6601

25oC Operating Junction and Storage Tem perature Range Typical Thermal Resista nce - Junction to Ambient (Note 3) SYM BOL N-Ch LIMIT P-Ch LIMIT VDS 20 -20 VGS +12 +12 ID 4.1 -3.1 IDM 16.4 -1 2.4 1.25 PD 10 TJ,TSTG -55~150 RθJ A 100 UNITS V V A A W mW/ oC oC oC/W September 18,2015-REV.00 Page 1 PPJS 6601 N-Channel Electrical Characteri stics o (TA=25 C .


Pan Jit International PJS6601

unless otherwise noted) PARAMETER Sta tic Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-Stat e Resistance Zero Gate Voltage Drain Cu rrent Gate-Source Leakage Current Dynam ic (Note 5) Total Gate Charge Gate-Sour ce Charge Gate-Drain Charge Input Capac itance Output Capacitance Reverse Trans fer Capacitance Turn-On Delay Time Turn -On Rise Time Turn.

Part

PJS6601

Description

Complementary Enhancement Mode MOSFET



Feature


PPJS6601 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 4.1 /-3.1A SOT-23 6L Features  Ad vanced Trench Process Technology  Sp ecially Designed for Switch Load, PWM A pplication, etc.  Lead free in compl iance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC6 1249 Std. (Halogen Free) Mechanical Da ta  Case: SOT-23 6L Packa.
Manufacture

Pan Jit International

Datasheet
Download PJS6601 Datasheet




 PJS6601
PPJS6601
20V Complementary Enhancement Mode MOSFET
Voltage 20 / -20V Current 4.1 /-3.1A
SOT-23 6L
Features
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: SC1
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient (Note 3)
SYMBOL N-Ch LIMIT P-Ch LIMIT
VDS 20
-20
VGS +12
+12
ID 4.1 -3.1
IDM 16.4 -12.4
1.25
PD
10
TJ,TSTG
-55~150
RθJA
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
September 18,2015-REV.00
Page 1




 PJS6601
PPJS6601
N-Channel
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
VSD
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=4.1A
VGS=2.5V, ID=2.8A
VGS=1.8V, ID=1.5A
VDS=20V, VGS=0V
VGS=+12V, VDS=0V
VDS=10V, ID=4.1A,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=4.1A,
VGS=4.5V,
RG=6Ω (Note 1,2)
---
IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
20 -
-V
0.4 0.66 1.2
V
- 41 56
- 50 68 mΩ
- 66 95
- - 1 uA
- - +100 nA
- 4.6 -
- 0.8 - nC
-1-
- 350 -
- 40 - pF
- 29 -
-4-
- 47 -
ns
- 18 -
- 10 -
- - 1.5 A
-
0.75
1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing
September 18,2015-REV.00
Page 2




 PJS6601
PPJS6601
P-Channel
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
VSD
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-4.5V, ID=-3.1A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.1A
VDS=-20V, VGS=0V
VGS=+12V, VDS=0V
VDS=-10V, ID=-3.1A,
VGS=-4.5V (Note 1,2)
VDS=-10V, VGS=0V,
f=1.0MHZ
VDD=-10V, ID=-3.1A,
VGS=-4.5V,
RG=6Ω (Note 1,2)
---
IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-20 -
-V
-0.4 -0.71 -1.2
V
- 84 100
- 104 135 mΩ
- 134 190
- - -1 uA
- - +100 nA
- 5.4 -
- 0.7 - nC
- 1.3 -
- 416 -
- 43 - pF
- 32 -
-4-
- 27 -
ns
- 78 -
- 45 -
- - -1.5 A
-
-0.8 -1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
September 18,2015-REV.00
Page 3



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