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M40T Dataheets PDF



Part Number M40T
Manufacturers nELL
Logo nELL
Description TRIACs
Datasheet M40T DatasheetM40T Datasheet (PDF)

SEMICONDUCTOR M40T Series RRooHHSS TRIACs, 40A Sunbberless FEATURES High current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-3 package High commutation capability Packages are RoHS compliant APPLICATIONS Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the M40T series provides voltage insulated tab (rated at 2500VRMS) complying with .

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SEMICONDUCTOR M40T Series RRooHHSS TRIACs, 40A Sunbberless FEATURES High current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-3 package High commutation capability Packages are RoHS compliant APPLICATIONS Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the M40T series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards. The snubberless concept offer suppression of RC network and it is suitable for applications such as : Static relays Solid state switches Motor controls Light dimmers Copy machines Microwave ovens Heater controls T2 T1 G MAIN FEATURES SYMBOL IT(RMS) VDRM/VRRM IGT(Q1) VALUE 40 600 to 1200 10 to 50 UNIT A V mA ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Peak gate power dissipation (tp = 20µs) Average gate power dissipation IT(RMS) ITSM I2t dI/dt IGM PGM PG(AV) F =50 Hz F =60 Hz tp = 10 ms F =100 Hz Tp =20 µs Tj =125ºC Tj =125ºC Storage temperature range Operating junction temperature range Tstg Tj TEST CONDITIONS Tc = 90ºC t = 20 ms t = 16.7 ms VALUE 40 400 420 800 UNIT A A A2s Tj =125ºC 50 A/µs Tj =125ºC 4 10 1 - 40 to + 150 - 40 to + 125 A W ºC www.nellsemi.com Page 1 of 5 SEMICONDUCTOR M40T Series RRooHHSS ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) SYMBOL TEST CONDITIONS QUADRANT IGT(1) VGT VGD IH(2) VD = 12 V, RL = 33Ω VD = VDRM, RL = 3.3KΩ Tj = 125°C IT = 500 mA IL IG = 1.2 IGT dV/dt(2) (dI/dt)c(2) VD = 67% VDRM, gate open ,Tj = 125°C Without snubber, Tj = 125°C I - II - III I - II - III I - II - III I - III II MAX. MIN. MAX. MAX. MIN. Limits BW 50 1.3 0.2 60 80 150 1000 20 Unit mA V V mA mA V/µs A/ms STATIC CHARACTERISTICS SYMBOL VTM(2) Vt0(2) Rd(2) IDRM IRRM ITM = 60 A, tP = 380 µs Threshold voltage Dynamic resistance VD = VDRM VR = VRRM TEST CONDITIONS Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. MAX. MAX. MAX. MAX. VALUE 1.55 0.85 10 10 5 UNIT V V mΩ µA mA THERMAL RESISTANCE SYMBOL Rth(j-c) Rth(j-a) S = Copper surface under tab. Junction to case (AC) Junction to ambient VALUE 0.8 50 UNIT °C/W PRODUCT SELECTOR PART NUMBER M40TxxA 600 V V VOLTAGE (x x) 800 V 1000 V VV 1200 V V SENSITIVITY 50 mA TYPE Snubberless PACKAGE TO-3 ORDERING INFORMATION ORDERING TYPE MARKING M40TxxA M40TxxA Note : xx = voltage PACKAGE TO-3 WEIGHT 23g BASE Q,TY DELIVERY MODE 50 BOX www.nellsemi.com Page 2 of 5 SEMICONDUCTOR M40T Series RRooHHSS ORDERING INFORMATION SCHEME Module type M = TO-3 Fast-on package Current 40 = 40A Triac series Voltage 60 = 600V 80 = 800V 100 = 1000V 120 = 1200V Assembly type A = Soldering Assembly M 40 T 60 A Fig.1 Maximum power dissipation versus on-state RMS current (full cycle) P (W) 50 40 30 20 10 0 0 IT(RMS)(A) 180° α α 5 10 15 20 25 30 35 40 Fig.2 On-state RMS current versus case temperature (full cycle) IT(RMS) (A) 45 40 35 30 25 20 15 10 5 0 0 25 α=180° Tc(°c) 50 75 100 125 Fig.3 Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1E+00 Zth(j-c) 1E-01 Fig.4 On-state characteristics (maximum values). ITM(A) 400 100 Tj=Tj max 1E-02 1E-03 1E-03 1E-02 1E-01 10 Tj=25°C tp(s) 1E+00 1E+01 1E+02 1E+0.3 VTM(V) Tj max. Vto = 0.85 V Rd = 10 mΩ 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 www.nellsemi.com Page 3 of 5 SEMICONDUCTOR M40T Series RRooHHSS Fig.5 Surge peak on-state current versus number of cycles. Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse and corresponding value of l2t. ITSM(A) 450 400 350 Non repetitive 300 Tj initial=25°C 250 200 150 Repetitive Tc=70°C 100 50 Number of cycles 0 1 10 100 t=20ms One cycle ITSM(A),l2t(A2s) 10000 1000 dl/dt limitation 50A/µs ITSM Tj initial =25°C Pulse width tp <10 ms I2t 1000 100 0.01 tp(ms) 0.10 1.00 10.00 Fig.7 Relative variation of gate trigger, holding and latching current versus junction temperature. lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C] 2.5 2.0 lGT 1.5 lH & lL 1.0 Typical values 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 Fig.8 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [(dV/dt)c] / specified (dI/dt)c 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 (dV/dt)c (V/µs) 1.0 10.0 100.0 Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 Tj(°C) 0 0 25 50 75 100 125 www.nellsemi.com Page 4 of 5 SEMICONDUCTOR Case Style TO-3 M40T Series RRooHHSS 2-Ø4..


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