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M55T Dataheets PDF



Part Number M55T
Manufacturers nELL
Logo nELL
Description TRIACs
Datasheet M55T DatasheetM55T Datasheet (PDF)

SEMICONDUCTOR M55T Series RRooHHSS TRIACs, 55A Sunbberless FEATURES High current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-3 package High commutation capability Packages are RoHS compliant APPLICATIONS Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the M55T series provides voltage insulated tab (rated at 2500VRMS) complying with .

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SEMICONDUCTOR M55T Series RRooHHSS TRIACs, 55A Sunbberless FEATURES High current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-3 package High commutation capability Packages are RoHS compliant APPLICATIONS Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the M55T series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards. The snubberless concept offer suppression of RC network and it is suitable for applications such as : Static relays Solid state switches Motor controls Light dimmers Copy machines Microwave ovens Heater controls T2 T1 G 55 MAIN FEATURES SYMBOL IT(RMS) VDRM/VRRM IGT(Q1) VALUE 55 800 to 1600 10 to 50 UNIT A V mA ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Peak gate power dissipation (tp = 20µs) Average gate power dissipation IT(RMS) ITSM I2t dI/dt IGM PGM PG(AV) F =50 Hz F =60 Hz tp = 10 ms F =120 Hz Tp =20 µs Tj =125ºC Tj =125ºC Storage temperature range Operating junction temperature range Tstg Tj TEST CONDITIONS Tc = 90ºC t = 20 ms t = 16.7 ms VALUE 55 550 600 1510 UNIT A A A2s Tj =125ºC 100 A/µs Tj =125ºC 8 10 2 - 40 to + 150 - 40 to + 125 A W ºC www.nellsemi.com Page 1 of 5 SEMICONDUCTOR M55T Series RRooHHSS ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) SYMBOL TEST CONDITIONS QUADRANT IGT(1) VGT VGD IH(2) VD = 12 V, RL = 33Ω VD = VDRM, RL = 3.3KΩ Tj = 125°C IT = 500 mA IL IG = 1.2 IGT dV/dt(2) (dI/dt)c(2) VD = 67% VDRM, gate open ,Tj = 125°C Without snubber, Tj = 125°C I - II - III I - II - III I - II - III I - III II MAX. MIN. MAX. MAX. MIN. Limits BW 50 1.3 0.2 80 80 160 1000 20 Unit mA V V mA mA V/µs A/ms STATIC CHARACTERISTICS SYMBOL VTM(2) Vt0(2) Rd(2) IDRM IRRM ITM = 82 A, tP = 380 µs Threshold voltage Dynamic resistance VD = VDRM VR = VRRM TEST CONDITIONS Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. MAX. MAX. MAX. MAX. VALUE 1.55 0.85 10 50 8 UNIT V V mΩ µA mA THERMAL RESISTANCE SYMBOL Rth(j-c) Rth(j-a) S = Copper surface under tab. Junction to case (AC) Junction to ambient VALUE 0.50 50 UNIT °C/W PRODUCT SELECTOR PART NUMBER M55TxxA 800 V V VOLTAGE (x x) 1000 V 1200 V VV 1600 V V SENSITIVITY 50 mA TYPE Snubberless PACKAGE TO-3 ORDERING INFORMATION ORDERING TYPE MARKING M55TxxA M55TxxA Note : xx = voltage PACKAGE TO-3 WEIGHT 23g BASE Q,TY DELIVERY MODE 50 BOX www.nellsemi.com Page 2 of 5 SEMICONDUCTOR M55T Series RRooHHSS ORDERING INFORMATION SCHEME Module type M = TO-3 Fast-on package Current 55 = 55A Triac series Voltage 80 = 800V 100 = 1000V 120 = 1200V 160 = 1600V Assembly type A = Soldering Assembly M 55 T 60 A Fig.1 Maximum power dissipation versus on-state RMS current (full cycle) P (W) 60 50 40 30 20 180° α 10 α IT(RMS)(A) 0 0 5 10 15 20 25 30 35 40 45 50 55 Fig.2 On-state RMS current versus case temperature (full cycle) IT(RMS) (A) 60 50 40 30 20 10 0 0 25 α=180° Tc(°c) 50 75 100 125 Fig.3 Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1E+00 Zth(j-c) 1E-01 Fig.4 On-state characteristics (maximum values). ITM(A) 400 100 Tj=Tj max 1E-02 1E-03 1E-03 1E-02 1E-01 10 Tj=25°C tp(s) 1E+00 1E+01 1E+02 1E+0.3 VTM(V) Tj max. Vto = 0.85 V Rd = 10 mΩ 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 www.nellsemi.com Page 3 of 5 SEMICONDUCTOR M55T Series RRooHHSS Fig.5 Surge peak on-state current versus number of cycles. Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse and corresponding value of l2t. ITSM(A) 600 500 450 400 350 300 250 200 150 100 50 0 1 Non repetitive Tj initial=25°C t=20ms One cycle ITSM(A),l2t(A2s) 10000 dl/dt limitation 100A/µs 1000 ITSM Tj initial=25°C Pulse width tp <10 ms I2t Number of cycles 10 100 1000 100 0.01 t=10ms Half cycle tp (ms) 0.10 1.00 10.00 Fig.7 Relative variation of gate trigger, holding and latching current versus junction temperature. lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C] 2.5 2.0 lGT 1.5 lH & lL 1.0 Typical values 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 Fig.8 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [(dV/dt)c] / specified (dI/dt)c 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 (dV/dt)c (V/µs) 1.0 10.0 100.0 Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 Tj(°C) 0 0 25 50 75 100 125 www.nellsemi.com Page 4 of 5 SEMICONDUCTOR Case Style TO-3 M55T Series.


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