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MTP30016 Dataheets PDF



Part Number MTP30016
Manufacturers nELL
Logo nELL
Description Three-Phase Bridge Rectifier
Datasheet MTP30016 DatasheetMTP30016 Datasheet (PDF)

SEMICONDUCTOR MTP300 Series RRooHHSS Nell High Power Products Three-Phase Bridge Rectifier, 300A MTP30008 Thru MTP30018 4-ø6.50 ~ 51.00 ~ ~ 67.0 52.50 33.50 + 51.00 94.00 108.00 - 2-M8 Screw 3-M6 Screw 42.0 32.5 7.5 FEATURES UL recognition file number E320098 Typical IR less than 5.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V TYPICAL APPLICATIONS DC power supplies for apparatus device Input rectifying power supplies for PW.

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SEMICONDUCTOR MTP300 Series RRooHHSS Nell High Power Products Three-Phase Bridge Rectifier, 300A MTP30008 Thru MTP30018 4-ø6.50 ~ 51.00 ~ ~ 67.0 52.50 33.50 + 51.00 94.00 108.00 - 2-M8 Screw 3-M6 Screw 42.0 32.5 7.5 FEATURES UL recognition file number E320098 Typical IR less than 5.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V TYPICAL APPLICATIONS DC power supplies for apparatus device Input rectifying power supplies for PWM converters Field supplies for DC motors Inverter welders ADVANTAGE International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Weight: 600g (21.2 ozs) PRIMARY CHARACTERRISTICS IF(AV) 300A VRRM 800V to 1800V IFSM 4000A IR 20 µA VF 1.30V TJ max. 150ºC www.nellsemi.com Page 1 of 3 SEMICONDUCTOR MTP300 Series RRooHHSS Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL 08 10 MTP300 12 16 Maximum repetitive peak reverse voltage Peak reverse non-repetitive voltage VRRM VRSM 800 1000 1200 1600 900 1100 1300 1700 Maximum DC blocking voltage Maximum average forward rectified output current at TC = 100°C VDC IF(AV) 800 1000 1200 1600 300 Peak forward surge current single sine-wave superimposed on rated load IFSM 4000 UNIT 18 1800 V 1900 V 1800 V A A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range Storage temperature range I2t VISO TJ TSTG 66.4 2500 -40 to 150 -40 to 125 KA2s V ºC ºC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking voltage per diod TEST SYMBOL CONDITIONS IF = 300A TA = 25°C TA = 150°C VF IR 08 MTP300 10 12 16 1.30 20 10 UNIT 18 V µA mA THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Typical thermal resistance junction to case Mounting torque ± 10 % to heatsink M6 to terminal M8 Single-side heat dissipation, sine half wave A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. RθJC(1) Approximate weight 08 Notes (1) With heatsink, single side heat dissipation, half sine wave. MTP300 10 12 16 0.08 4 10 600 UNIT 18 °C/W Nm g www.nellsemi.com Device code MTP 300 16 12 3 1 - Module type: ”MTP” for 3Ø Brıdge 2 - IF(AV) rating:"300" for 300 A 3 - Voltage code:code x 100 = VRRM Page 2 of 3 SEMICONDUCTOR MTP300 Series RRooHHSS Nell High Power Products Peak on-state voltage (V) Fig.1 Forward current vs. Forward voltage 3 2.5 TJ=25°C 2.0 1.5 1.0 0.5 0 10 100 Peak on-state current (A) 1000 Transient Thermal Impedance (°C/W) Fig.2 Thermal lmpedance (junction to case) 0.08 0.06 0.04 0.02 0 0.001 0.01 0.1 Time (s) 1 10 On-state Power consumption (W) Fig.3 Power Consumption vs. Avergage Current 1200 1050 900 750 600 450 300 150 0 0 100 200 300 On-state average current (A) 400 Fig.5 Forward Surge Current vs. Cycle 4000 3000 2000 1000 0 1 10 Cycle @ 50Hz 100 I2t (KA2S) On-state average current(A) Fig.4 Case Temperature vs. O-state Average Current 400 300 200 100 0 0 30 60 90 120 150 180 Case Temperature (°C) Fig.6 I2t characteristic 80 70 60 50 40 30 20 10 0 1 5 10 Time (ms) Forward surge current (A) www.nellsemi.com Page 3 of 3 .


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