Document
SEMICONDUCTOR
MTP300 Series RRooHHSS
Nell High Power Products
Three-Phase Bridge Rectifier, 300A MTP30008 Thru MTP30018
4-ø6.50
~
51.00
~
~
67.0
52.50 33.50
+
51.00 94.00 108.00
-
2-M8 Screw
3-M6 Screw
42.0
32.5 7.5
FEATURES
UL recognition file number E320098 Typical IR less than 5.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V
TYPICAL APPLICATIONS
DC power supplies for apparatus device Input rectifying power supplies for PWM converters Field supplies for DC motors Inverter welders
ADVANTAGE
International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Weight: 600g (21.2 ozs)
PRIMARY CHARACTERRISTICS
IF(AV)
300A
VRRM
800V to 1800V
IFSM
4000A
IR 20 µA
VF 1.30V
TJ max.
150ºC
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Page 1 of 3
SEMICONDUCTOR
MTP300 Series RRooHHSS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL 08
10
MTP300 12
16
Maximum repetitive peak reverse voltage Peak reverse non-repetitive voltage
VRRM VRSM
800 1000 1200 1600 900 1100 1300 1700
Maximum DC blocking voltage Maximum average forward rectified output current at TC = 100°C
VDC IF(AV)
800 1000 1200 1600 300
Peak forward surge current single sine-wave superimposed on rated load
IFSM
4000
UNIT 18 1800 V 1900 V 1800 V
A
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range Storage temperature range
I2t
VISO TJ
TSTG
66.4
2500 -40 to 150 -40 to 125
KA2s
V ºC ºC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking voltage per diod
TEST
SYMBOL
CONDITIONS
IF = 300A TA = 25°C TA = 150°C
VF IR
08
MTP300 10 12 16
1.30 20 10
UNIT 18
V
µA mA
THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Typical thermal resistance junction to case
Mounting torque ± 10 %
to heatsink M6 to terminal M8
Single-side heat dissipation, sine half wave
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound.
RθJC(1)
Approximate weight
08
Notes (1) With heatsink, single side heat dissipation, half sine wave.
MTP300 10 12 16
0.08
4 10 600
UNIT 18
°C/W
Nm
g
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Device code MTP 300 16
12 3
1 - Module type: ”MTP” for 3Ø Brıdge 2 - IF(AV) rating:"300" for 300 A 3 - Voltage code:code x 100 = VRRM
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SEMICONDUCTOR
MTP300 Series RRooHHSS
Nell High Power Products
Peak on-state voltage (V)
Fig.1 Forward current vs. Forward voltage
3 2.5 TJ=25°C 2.0
1.5
1.0
0.5
0 10
100 Peak on-state current (A)
1000
Transient Thermal Impedance (°C/W)
Fig.2 Thermal lmpedance (junction to case) 0.08
0.06
0.04
0.02
0 0.001
0.01
0.1 Time (s)
1
10
On-state Power consumption (W)
Fig.3 Power Consumption vs. Avergage Current
1200 1050
900 750 600 450 300 150
0 0
100 200 300 On-state average current (A)
400
Fig.5 Forward Surge Current vs. Cycle 4000
3000
2000
1000
0 1
10 Cycle @ 50Hz
100
I2t (KA2S)
On-state average current(A)
Fig.4 Case Temperature vs. O-state Average Current
400
300
200
100
0 0 30 60 90 120 150 180 Case Temperature (°C)
Fig.6 I2t characteristic 80 70 60 50 40 30 20 10
0 1 5 10 Time (ms)
Forward surge current (A)
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