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Bridge Rectifier. MTP50012 Datasheet

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Bridge Rectifier. MTP50012 Datasheet






MTP50012 Rectifier. Datasheet pdf. Equivalent




MTP50012 Rectifier. Datasheet pdf. Equivalent





Part

MTP50012

Description

Three-Phase Bridge Rectifier



Feature


SEMICONDUCTOR MTP500 Series RRooHHSS Ne ll High Power Products Three-Phase Brid ge Rectifier, 500A MTP50008 Thru MTP500 18 4-ø6.5 ~ 68.00 ~ ~ 84.0 66.50 41.50 +- 70.00 123.00 142.0 2-M10 Sc rew 3-M8 Screw 42.0 7.5 FEATURES UL recognition file number E320098 Typical IR less than 5.0 µA High surge curren t capability Low thermal resistance Com pliant to RoHS Isola.
Manufacture

nELL

Datasheet
Download MTP50012 Datasheet


nELL MTP50012

MTP50012; tion voltage up to 2500V TYPICAL APPLICA TIONS DC power supplies for apparatus d evice Input rectifying power supplies f or PWM converters Field supplies for DC motors Inverter welders ADVANTAGE Inte rnational standard package Epoxy meets UL 94 V-O flammability rating Small vol ume, light weight Weight: 1100g (38.8 o zs) All dimensions in millimeters PRI MARY CHARACTERRIST.


nELL MTP50012

ICS IF(AV) 500A VRRM 800V to 1800V IFSM 8000A IR 20 µA VF 1.35V TJ ma x. 150ºC www.nellsemi.com Page 1 of 3 SEMICONDUCTOR MTP500 Series RRooHH SS Nell High Power Products MAJOR RATI NGS AND CHARACTERISTICS (TA = 25°C unl ess otherwise noted) PARAMETER SYMBOL 08 10 MTP500 12 16 Maximum repetit ive peak reverse voltage Peak reverse n on-repetitive voltage.


nELL MTP50012

VRRM VRSM 800 1000 1200 1600 900 1100 1300 1700 Maximum DC blocking voltage Maximum average forward rectified outp ut current at TC = 100°C VDC IF(AV) 800 1000 1200 1600 500 Peak forward su rge current single sine-wave superimpos ed on rated load IFSM 8000 UNIT 18 1 800 V 1900 V 1800 V A A Rating (non-re petitive, for t greater than 1 ms and l ess than 8.3 ms) fo.

Part

MTP50012

Description

Three-Phase Bridge Rectifier



Feature


SEMICONDUCTOR MTP500 Series RRooHHSS Ne ll High Power Products Three-Phase Brid ge Rectifier, 500A MTP50008 Thru MTP500 18 4-ø6.5 ~ 68.00 ~ ~ 84.0 66.50 41.50 +- 70.00 123.00 142.0 2-M10 Sc rew 3-M8 Screw 42.0 7.5 FEATURES UL recognition file number E320098 Typical IR less than 5.0 µA High surge curren t capability Low thermal resistance Com pliant to RoHS Isola.
Manufacture

nELL

Datasheet
Download MTP50012 Datasheet




 MTP50012
SEMICONDUCTOR
MTP500 Series RRooHHSS
Nell High Power Products
Three-Phase Bridge Rectifier, 500A
MTP50008 Thru MTP50018
4-ø6.5
~
68.00
~
~
+-
70.00
123.00
142.0
2-M10 Screw
3-M8 Screw
FEATURES
UL recognition file number E320098
Typical IR less than 5.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
DC power supplies for apparatus device
Input rectifying power supplies for PWM converters
Field supplies for DC motors
Inverter welders
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Weight: 1100g (38.8 ozs)
All dimensions in millimeters
PRIMARY CHARACTERRISTICS
IF(AV)
500A
VRRM
800V to 1800V
IFSM
8000A
IR 20 µA
VF 1.35V
TJ max.
150ºC
www.nellsemi.com
Page 1 of 3




 MTP50012
SEMICONDUCTOR
MTP500 Series RRooHHSS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
08
10
MTP500
12
16
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
VRRM
VRSM
800 1000 1200 1600
900 1100 1300 1700
Maximum DC blocking voltage
Maximum average forward rectified output current at TC = 100°C
VDC
IF(AV)
800 1000 1200 1600
500
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
8000
UNIT
18
1800 V
1900 V
1800 V
A
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I2t
VISO
TJ
TSTG
265.6
2500
-40 to 150
-40 to 125
KA2s
V
ºC
ºC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
TEST
SYMBOL
CONDITIONS
IF = 500A
TA = 25°C
TA = 150°C
VF
IR
08
MTP500
10 12 16
1.35
20
15
UNIT
18
V
µA
mA
THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
to heatsink M6
to terminal M8
to terminal M10
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
RθJC(1)
Approximate weight
08
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
MTP500
10 12 16
0.05
4
10
12
1100
UNIT
18
°C/W
Nm
g
www.nellsemi.com
Device code MTP 500 16
12 3
1 - Module type: ”MTP” for 3Ø Brıdge
2 - IF(AV) rating:"500" for 500 A
3 - Voltage code:code x 100 = VRRM
Page 2 of 3




 MTP50012
SEMICONDUCTOR
MTP500 Series RRooHHSS
Nell High Power Products
Fig.1 Forward current vs. Forward voltage
3
2.5 TJ=25°C
2.0
1.5
1.0
0.5
0
10
100
Peak on-state current (A)
1000
Fig.2 Thermal lmpedance (junction to case)
0.060
0.045
0.030
0.015
0
0.001
0.01
0.1
Time (s)
1
10
Fig.3 Power Consumption vs. Avergage Current
1400
1200
1000
800
600
400
200
0
0
100 200 300 400
On-state average current (A)
500
Fig.5 Forward Surge Current vs. Cycle
8000
6000
4000
2000
0
1
10
Cycle @ 50Hz
100
Fig.4 Case Temperature vs. O-state Average Current
600
500
400
300
200
100
0
0
30 60 90 120 150 180
Case Temperature (°C)
350
300
250
200
150
100
50
0
1
Fig.6 I2t characteristic
5
Time (ms)
10
www.nellsemi.com
Page 3 of 3



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