Document
SEMICONDUCTOR
MTPT150 RRooHHSS
Nell High Power Products
Three-Phase Bridge + Thyristor, 150A MTPT15008 Thru MTPT15016
13.5 20 M4
R2
G
108 93 22 22
+-
12
R ST 28 22 22
4- 6.2
6-M6
26 62 22 48 1 8.5
41 27
FEATURES
UL recognition file number E320098 Three-phase bridge and a thyristor High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V
Applications
lnverter for AC or DC motor control Current stablilzed power supply Switching power supply
ADVANTAGE
International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Small thermal resistance Weight: 470g (16.6 ozs)
All dimensions in millimeters
G R2
+
-
PRIMARY CHARACTERRISTICS
IF(AV)
150A
VRRM
800V to 1600V
IFSM
1460A
IR 20 µA
VFM/VTM
1.3V
TJ max.
150ºC
www.nellsemi.com
Page 1 of 5
SEMICONDUCTOR
MTPT150 RRooHHSS
Maximum Ratings for Diodes
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
08
MTPT150 12
UNIT 16
Maximum repetitive peak reverse voltage Peak reverse non-repetitive voltage Output DC current three-phase full wave, Tc = 100°C
VRRM/VRRM VRSM IO
800 900
1200 1300 150
1600 1700
V V A
Peak forward surge current single sine-wave superimposed on rated load
IFSM
1460
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing
Operating junction temperature range Storage temperature range Thermal Impedance, junction to case Thermal Impedance, case to heatsink
I2t
TJ TSTG RthJC RthCS
10660
-40 to 150 -40 to 125
0.14 0.07
A2s
ºC ºC ºC/W ºC/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking voltage per diod
TEST CONDITIONS
IF = 150A TA = 25°C TA = 150°C
SYMBOL VF IR
08
Maximum Ratings for Thyristor
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current at case temperature
IT(AV) 180° conduction, half sine wave ,50Hz
Maximum peak, one-cycle, on-state ITSM t = 10 ms
non-repetitive surge current
t = 8.3 ms No voltage
t = 10 ms reapplied
Maximum I2t for fusing
t = 8.3 ms I 2t
Sine half wave, initial TJ = TJ maximum
t = 10 ms 100%VRRM
t = 8.3 ms reapplied
Maximum I2√t for fusing
I2√t t = 0.1 ms to 10 ms, no voltage reapplied
Maximum on-state voltage drop Maximum holding current Maximum latching current
VTM ITM = 150A , TJ = 25 °C, 180° conduction
IH Anode supply = 12 V initial IT = 30 A, TJ = 25 °C
IL
Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 °C
SWITCHING
PARAMETER Typical delay time Typical rise time
Typical tum-off time
SYMBOL td tr
TEST CONDITIONS
TJ = 25 °C ,gate current = 1A dlg/dt = 1 A/µs Vd = 0.67 % VDRM
tq ITM = 300A ; dl/dt = 15 A/µs ; TJ = TJ maximum, VR = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω
www.nellsemi.com
Page 2 of 5
MTPT150 12 1.3 20 10
UNIT 16
V
µA mA
VALUES 150 85 1460 1529 10.7 9.7 7.5 6.8
107
1.3
200
400
UNITS A °C A
kA2s
kA2√s V
mA
VALUES 1 2
50 to 150
UNITS μs
SEMICONDUCTOR
MTPT150 RRooHHSS
Nell High Power Products
BLOCKING
PARAMETER Maximum peak reverse and off-state leakage current
RMS isolation Voltage
Critical rate of rise of off-state voltage
SYMBOL IRRM, IDRM VISO
dV/dt
TEST CONDITIONS
TJ = 125 °C
50 Hz, circuit to base, all terminals shorted, 25 ºC ,60s TJ = TJ maximum, exponential to 67 % rated VDRM
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current Maximum peak negative gate voltage
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger Maximum gate current that will not trigger Maximum rate of rise of turned-on current
SYMBOL PGM PG(AV) IGM
- VGT
TEST CONDITIONS tp ≤ 5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum
tp ≤ 5 ms, TJ = TJ maximum
VGT TJ = 25 °C
I GT
Anode supply = 12 V, resistive load; Ra = 1 Ω
VGD I GD dI/dt
TJ = TJ maximum, 67% VDRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
junction operating and storage temperature range
TJ, Tstg
Maximum thermal resistance, junction to case per junction
Typical thermal resistance, case to heatsink per module
RthJC RthCS
DC operation Mounting surface, smooth , flat and greased
Mounting
to heatsink, M6
torque ± 10 % to terminal, M6/M4
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound.
Approximate weight
VALUES 30
3000 500
UNITS mA V V/μs
VALUES 10 3 3 10
3
100
0.25 10 200
UNITS W A
V
mA V mA A/μs
VALUES - 40 to 125
0.21 0.09
5
5/2 470 16.6
UNITS °C
°C/W
N.m g oz.
Device code MTPT 150 16
1 23 1 - Module type : “MTPT” for 3Ø Bridge + Thyristor 2 - IF(AV) rating : "150" for 200 A 3 - Voltage code : code x 100 = VRRM
www.nellsemi.com
Page 3 of 5
Pvtot(W).