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MTPT15008 Dataheets PDF



Part Number MTPT15008
Manufacturers nELL
Logo nELL
Description Three-Phase Bridge + Thyristor
Datasheet MTPT15008 DatasheetMTPT15008 Datasheet (PDF)

SEMICONDUCTOR MTPT150 RRooHHSS Nell High Power Products Three-Phase Bridge + Thyristor, 150A MTPT15008 Thru MTPT15016 13.5 20 M4 R2 G 108 93 22 22 +- 12 R ST 28 22 22 4- 6.2 6-M6 26 62 22 48 1 8.5 41 27 FEATURES UL recognition file number E320098 Three-phase bridge and a thyristor High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V Applications lnverter for AC or DC motor control Current stablilzed power supply Switching power supply ADVAN.

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SEMICONDUCTOR MTPT150 RRooHHSS Nell High Power Products Three-Phase Bridge + Thyristor, 150A MTPT15008 Thru MTPT15016 13.5 20 M4 R2 G 108 93 22 22 +- 12 R ST 28 22 22 4- 6.2 6-M6 26 62 22 48 1 8.5 41 27 FEATURES UL recognition file number E320098 Three-phase bridge and a thyristor High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V Applications lnverter for AC or DC motor control Current stablilzed power supply Switching power supply ADVANTAGE International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Small thermal resistance Weight: 470g (16.6 ozs) All dimensions in millimeters G R2 + - PRIMARY CHARACTERRISTICS IF(AV) 150A VRRM 800V to 1600V IFSM 1460A IR 20 µA VFM/VTM 1.3V TJ max. 150ºC www.nellsemi.com Page 1 of 5 SEMICONDUCTOR MTPT150 RRooHHSS Maximum Ratings for Diodes Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL 08 MTPT150 12 UNIT 16 Maximum repetitive peak reverse voltage Peak reverse non-repetitive voltage Output DC current three-phase full wave, Tc = 100°C VRRM/VRRM VRSM IO 800 900 1200 1300 150 1600 1700 V V A Peak forward surge current single sine-wave superimposed on rated load IFSM 1460 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing Operating junction temperature range Storage temperature range Thermal Impedance, junction to case Thermal Impedance, case to heatsink I2t TJ TSTG RthJC RthCS 10660 -40 to 150 -40 to 125 0.14 0.07 A2s ºC ºC ºC/W ºC/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking voltage per diod TEST CONDITIONS IF = 150A TA = 25°C TA = 150°C SYMBOL VF IR 08 Maximum Ratings for Thyristor FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave ,50Hz Maximum peak, one-cycle, on-state ITSM t = 10 ms non-repetitive surge current t = 8.3 ms No voltage t = 10 ms reapplied Maximum I2t for fusing t = 8.3 ms I 2t Sine half wave, initial TJ = TJ maximum t = 10 ms 100%VRRM t = 8.3 ms reapplied Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied Maximum on-state voltage drop Maximum holding current Maximum latching current VTM ITM = 150A , TJ = 25 °C, 180° conduction IH Anode supply = 12 V initial IT = 30 A, TJ = 25 °C IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 °C SWITCHING PARAMETER Typical delay time Typical rise time Typical tum-off time SYMBOL td tr TEST CONDITIONS TJ = 25 °C ,gate current = 1A dlg/dt = 1 A/µs Vd = 0.67 % VDRM tq ITM = 300A ; dl/dt = 15 A/µs ; TJ = TJ maximum, VR = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω www.nellsemi.com Page 2 of 5 MTPT150 12 1.3 20 10 UNIT 16 V µA mA VALUES 150 85 1460 1529 10.7 9.7 7.5 6.8 107 1.3 200 400 UNITS A °C A kA2s kA2√s V mA VALUES 1 2 50 to 150 UNITS μs SEMICONDUCTOR MTPT150 RRooHHSS Nell High Power Products BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS isolation Voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VISO dV/dt TEST CONDITIONS TJ = 125 °C 50 Hz, circuit to base, all terminals shorted, 25 ºC ,60s TJ = TJ maximum, exponential to 67 % rated VDRM TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger Maximum rate of rise of turned-on current SYMBOL PGM PG(AV) IGM - VGT TEST CONDITIONS tp ≤ 5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum tp ≤ 5 ms, TJ = TJ maximum VGT TJ = 25 °C I GT Anode supply = 12 V, resistive load; Ra = 1 Ω VGD I GD dI/dt TJ = TJ maximum, 67% VDRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS junction operating and storage temperature range TJ, Tstg Maximum thermal resistance, junction to case per junction Typical thermal resistance, case to heatsink per module RthJC RthCS DC operation Mounting surface, smooth , flat and greased Mounting to heatsink, M6 torque ± 10 % to terminal, M6/M4 A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. Approximate weight VALUES 30 3000 500 UNITS mA V V/μs VALUES 10 3 3 10 3 100 0.25 10 200 UNITS W A V mA V mA A/μs VALUES - 40 to 125 0.21 0.09 5 5/2 470 16.6 UNITS °C °C/W N.m g oz. Device code MTPT 150 16 1 23 1 - Module type : “MTPT” for 3Ø Bridge + Thyristor 2 - IF(AV) rating : "150" for 200 A 3 - Voltage code : code x 100 = VRRM www.nellsemi.com Page 3 of 5 Pvtot(W).


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