K2007 Datasheet: 2SK2007





K2007 2SK2007 Datasheet

Part Number K2007
Description 2SK2007
Manufacture Hitachi Semiconductor
Total Page 9 Pages
PDF Download Download K2007 Datasheet PDF

Features: 2SK2007 Silicon N-Channel MOS FET Applic ation High speed power switching Featur es • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for S witching regulator, DC - DC converter, Motor Control Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2S K2007 Absolute Maximum Ratings (Ta = 2 5°C) Item Drain to source voltage Gat e to source voltage Drain current Drain peak current Body to drain diode rever se drain current Channel dissipation Ch annel temperature Storage temperature N otes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Ts tg Ratings 250 ±30 20 80 20 100 150 55 to +150 Unit V V A A A W °C °C 2 2SK2007 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 250 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak cur rent IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) S.

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2SK2007
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC - DC converter, Motor Control
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source

                    
     






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