KST2222

KST2222 KST2222 General Purpose Transistor 2 NPN Epitaxial Silicon Transistor 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCES VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Value 60 30 5 600 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO ICEX ICBO hFE Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current DC Current Gain VCE (sat) * Collector-Emitter Saturation Voltage VBE (sat) * Base-Emitter Saturation Voltage fT Current Gain Bandwidth Product IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCE=60V, VEB=3V VCB=50V, IE=0 VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA *VCE=10V, IC=150mA *VCE=10V, IC=500mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=20mA, VCE=20V f=100MHz Cob Output Capacitance tON Turn On Time tOFF Turn Off Time * Pulse Test: PW≤300µs, Duty Cycle≤2% VCB=10V, IE=0, f=1.0MHz VCC=30V, VBE=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA Min. 60 30 5 35 50 75 100 30 250 Max. 10 0.01 Units V V V nA µA 300 0.4 V 1.6 V 1.3 V 2.6 V MHz 8.0 pF 35 ns 285 ns Marking 1B ©2000 Fairchild Semiconductor International Rev. A, February 2000 KST2222 Typ...