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Purpose Transistor. KST2222 Datasheet

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Purpose Transistor. KST2222 Datasheet






KST2222 Transistor. Datasheet pdf. Equivalent




KST2222 Transistor. Datasheet pdf. Equivalent





Part

KST2222

Description

General Purpose Transistor



Feature


KST2222 KST2222 General Purpose Transis tor 2 NPN Epitaxial Silicon Transisto r 1 SOT-23 1. Base 2. Emitter 3. Colle ctor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parame ter VCBO VCES VEBO IC PC TSTG Collect or-Base Voltage Collector-Emitter Volta ge Emitter-Base Voltage Collector Curre nt Collector Dissipation Storage Temper ature Value 60 30 .
Manufacture

Fairchild Semiconductor

Datasheet
Download KST2222 Datasheet


Fairchild Semiconductor KST2222

KST2222; 5 600 350 150 Units V V V mA mW °C El ectrical Characteristics Ta=25°C unles s otherwise noted Symbol Parameter T est Condition BVCBO BVCEO BVEBO ICEX I CBO hFE Collector-Base Breakdown Volta ge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collecto r Cut-off Current Collector Cut-off Cur rent DC Current Gain VCE (sat) * Colle ctor-Emitter Saturat.


Fairchild Semiconductor KST2222

ion Voltage VBE (sat) * Base-Emitter Sat uration Voltage fT Current Gain Bandwid th Product IC=10µA, IE=0 IC=10mA, IB= 0 IE=10µA, IC=0 VCE=60V, VEB=3V VCB=50 V, IE=0 VCE=10V, IC=0.1mA VCE=10V, IC=1 .0mA VCE=10V, IC=10mA *VCE=10V, IC=150m A *VCE=10V, IC=500mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC= 500mA, IB=50mA IC=20mA, VCE=20V f=100MH z Cob Output Capaci.


Fairchild Semiconductor KST2222

tance tON Turn On Time tOFF Turn Off T ime * Pulse Test: PW≤300µs, Duty Cy cle≤2% VCB=10V, IE=0, f=1.0MHz VCC=3 0V, VBE=0.5V IC=150mA, IB1=15mA VCC=30V , IC=150mA IB1=IB2=15mA Min. 60 30 5 3 5 50 75 100 30 250 Max. 10 0.01 Units V V V nA µA 300 0.4 V 1.6 V 1.3 V 2. 6 V MHz 8.0 pF 35 ns 285 ns Marking 1 B ©2000 Fairchild Semiconductor Inter national Rev. A, Februar.

Part

KST2222

Description

General Purpose Transistor



Feature


KST2222 KST2222 General Purpose Transis tor 2 NPN Epitaxial Silicon Transisto r 1 SOT-23 1. Base 2. Emitter 3. Colle ctor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parame ter VCBO VCES VEBO IC PC TSTG Collect or-Base Voltage Collector-Emitter Volta ge Emitter-Base Voltage Collector Curre nt Collector Dissipation Storage Temper ature Value 60 30 .
Manufacture

Fairchild Semiconductor

Datasheet
Download KST2222 Datasheet




 KST2222
KST2222
General Purpose Transistor
2
NPN Epitaxial Silicon Transistor
1 SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCES
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Value
60
30
5
600
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICEX
ICBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
VCE (sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCE=60V, VEB=3V
VCB=50V, IE=0
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
*VCE=10V, IC=150mA
*VCE=10V, IC=500mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=20mA, VCE=20V
f=100MHz
Cob Output Capacitance
tON Turn On Time
tOFF
Turn Off Time
* Pulse Test: PW300µs, Duty Cycle2%
VCB=10V, IE=0, f=1.0MHz
VCC=30V, VBE=0.5V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=IB2=15mA
Min.
60
30
5
35
50
75
100
30
250
Max.
10
0.01
Units
V
V
V
nA
µA
300
0.4 V
1.6 V
1.3 V
2.6 V
MHz
8.0 pF
35 ns
285 ns
Marking
1B
©2000 Fairchild Semiconductor International
Rev. A, February 2000




 KST2222
Typical Characteristics
10000
1000
VCE = 10V
100
10
1
10 100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
100
IE = 0
f = 1MHz
10
1
0.1
1
10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Output Capacitance
10
IC = 10 IB
1 VBE(sat)
0.1
VCE(sat)
0.01
1
10 100
IC[mA], COLLECTOR CURRENT
1000
Figure 2. Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
1000
VCE = 20V
100
10
1
10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000




 KST2222
Package Demensions
SOT-23
0.40 ±0.03
0.40 ±0.03
2.90 ±0.10
0.96~1.14
0.03~0.10
0.38 REF
0.12
+0.05
–0.023
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
©2000 Fairchild Semiconductor International
Dimensions in Millimeters
Rev. A, February 2000



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