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2SB1465 Dataheets PDF



Part Number 2SB1465
Manufacturers Renesas
Logo Renesas
Description PNP SILICON EPITAXIAL TRANSISTOR
Datasheet 2SB1465 Datasheet2SB1465 Datasheet (PDF)

DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay drivers in switching equipment and pulse motor drivers or relay drivers in such as OA and FA equipments. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Colle.

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DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay drivers in switching equipment and pulse motor drivers or relay drivers in such as OA and FA equipments. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Note Base current Total power dissipation (TC = 25°C) Total power dissipation (TA = 25°C) Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2 Tj Tstg −300 −300 −7 −300 −600 −30 25 2.0 150 −55 to +150 V V V mA mA mA W W °C °C PACKAGE DRAWING (UNIT: mm) Note PW ≤ 300 μs, duty cycle ≤ 10% Electrode Connection 1. Base (B) 2. Collector (C) 3. Emitter (E) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16130EJ2V0DS00 (2nd edition) Date Published November 2006 NS CP(K) Printed in Japan 2002 2SB1465 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = −300 V, IE = 0 Collector cutoff current ICEO VCE = −60 V, RBE = ∞ Emitter cutoff current DC current gain Note DC current gain Note Collector saturation voltage Note Base saturation voltage Note IEBO hFE1 hFE2 VCE(sat) VBE(sat) VEB = −5 V, IC = 0 VCE = −1.5 V, IC = −20 mA VCE = −1.5 V, IC = −100 mA IC = −100 mA, IB = −0.2 mA IC = −100 mA, IB = −0.2 mA Gain bandwidth product fT VCE = −1.5 V, IC = −20 mA Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz Note Pulsed PW ≤ 350 μs, duty cycle ≤ 2% TYPICAL CHARACTERISTICS (TA = 25°C) MIN. 1,000 1,500 TYP. MAX. −10 −10 −10 6,000 −0.8 −1.4 25 30 30,000 −1.5 −2.0 Unit μA μA μA V V MHz pF Collector Current IC (A) Total Power Dissipation PT (W) Notes 1. 2-mm thick aluminum heatsink 2. No insulating board 3. Silicon grease coating With infinite heatsink Ambient Temperature Ta (°C) Single pulse test Collector to Emitter Voltage VCE (V) Collector Current IC (mA) IC Derating dT (%) Case Temperature TC (°C) Collector to Emitter Voltage VCE (V) 2 Data Sheet D16130EJ2V0DS Collector Capacitance Cob (pF) DC Current Gain hFE Collector Current IC (A) Collector to Base Voltage VCB (V) Data Sheet D16130EJ2V0DS Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) 2SB1465 Pulse test Collector Current IC (mA) 3 .


D3010V12M-CT 2SB1465 B1465


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