Document
DATA SHEET
DARLINGTON TRASISTOR
2SB1465
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay drivers in switching equipment and pulse motor drivers or relay drivers in such as OA and FA equipments.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Note Base current Total power dissipation (TC = 25°C) Total power dissipation (TA = 25°C) Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2 Tj Tstg
−300 −300
−7 −300 −600 −30
25 2.0 150 −55 to +150
V V V mA mA mA W W °C °C
PACKAGE DRAWING (UNIT: mm)
Note PW ≤ 300 μs, duty cycle ≤ 10%
Electrode Connection 1. Base (B) 2. Collector (C) 3. Emitter (E)
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Document No. D16130EJ2V0DS00 (2nd edition) Date Published November 2006 NS CP(K) Printed in Japan
2002
2SB1465
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = −300 V, IE = 0
Collector cutoff current
ICEO VCE = −60 V, RBE = ∞
Emitter cutoff current DC current gain Note DC current gain Note Collector saturation voltage Note Base saturation voltage Note
IEBO hFE1 hFE2 VCE(sat) VBE(sat)
VEB = −5 V, IC = 0 VCE = −1.5 V, IC = −20 mA VCE = −1.5 V, IC = −100 mA IC = −100 mA, IB = −0.2 mA IC = −100 mA, IB = −0.2 mA
Gain bandwidth product
fT VCE = −1.5 V, IC = −20 mA
Collector capacitance
Cob VCB = −10 V, IE = 0, f = 1.0 MHz
Note Pulsed PW ≤ 350 μs, duty cycle ≤ 2%
TYPICAL CHARACTERISTICS (TA = 25°C)
MIN.
1,000 1,500
TYP.
MAX. −10 −10 −10
6,000 −0.8 −1.4 25 30
30,000 −1.5 −2.0
Unit μA μA μA
V V MHz pF
Collector Current IC (A)
Total Power Dissipation PT (W)
Notes 1. 2-mm thick aluminum heatsink
2. No insulating board 3. Silicon grease coating With infinite heatsink
Ambient Temperature Ta (°C)
Single pulse test
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
IC Derating dT (%)
Case Temperature TC (°C)
Collector to Emitter Voltage VCE (V)
2 Data Sheet D16130EJ2V0DS
Collector Capacitance Cob (pF)
DC Current Gain hFE
Collector Current IC (A)
Collector to Base Voltage VCB (V)
Data Sheet D16130EJ2V0DS
Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V)
2SB1465
Pulse test
Collector Current IC (mA)
3
.