BLP10H603

BLP10H603 Broadband LDMOS driver transistor Rev. 1 — 2 October 2014 Product data sheet 1. Product profile 1.1 General description A 2.5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1. Application performance Test signal f (MHz) CW 860 VDS PL Gp D (V) (W) (dB) (%) 50 2.5 22.8 62 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 1400 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLP10H603 Broadband LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin 1, 2, 4, 5, 6, 7, 8, 9, 11, 12 3 10 13 Description n.c. gate1 drain1 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol     [1]         7UDQVSDUHQWWRSYLHZ    DDD Table 3. Ordering information Type number Package Name Description Version BLP10H603 HVSON12 plastic thermal enhanced very thin small outline SOT1352-1 package; no leads; 12 terminals; body 5  6  0.85 mm 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage V...