BLP15M7160P

BLP15M7160P Power LDMOS transistor Rev. 3 — 9 February 2015 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Test signal f VDS IDq PL(AV) (MHz) (V) (mA) (W) pulsed, class-B 860 28 100 - PL(M) (W) 160 Gp (dB) 20 D (%) 62 1.2 Features and benefits  Integrated ESD protection  Excellent ruggedness  High power gain  High efficiency  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Communication transmitter applications in the HF to 1500 MHz frequency range  Industrial applications in the HF to 1500 MHz frequency range  Single product Doherty applications NXP Semiconductors BLP15M7160P Power LDMOS transistor 2. Pinning information Table 2. Pinning All pins must be connected for correct operation and to prevent damage to the device. Pin Description Simplified outline Graphic symbol 1 gate 1 2 gate 2   3 drain 2 4 drain 1 5 source SLQLQGH[ [1]      DDD [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Descript...