BLP8G27-10
Power LDMOS transistor
Rev. 1 — 24 August 2015
Product data sheet
1. Product profile
1.1 General descripti...
BLP8G27-10
Power LDMOS
transistor
Rev. 1 — 24 August 2015
Product data sheet
1. Product profile
1.1 General description
10 W plastic LDMOS power
transistor for base station applications at frequencies from 700 MHz to 2700 MHz.
Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D
ACPR5M
(MHz) (mA) (V) (dBm) (dB) (%) (dBc)
Pulsed CW
2700 110 28 33
17 19 -
2-carrier W-CDMA [1]
2700 110 28 33
17 22 47.3
[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
CDMA W-CDMA GSM EDGE MC-GSM LTE WiMAX
NXP Semiconductors
BLP8G27-10
Power LDMOS
transistor
2. Pinning information
Table 2. Pinning Pin 1, 2, 7, 8, 9, 10, 15, 16 3, 4, 5, 6 11, 12, 13, 14 exposed die-pad
Description n.c. gate drain source
Simplified outline
[2] 7UDQVSDUHQWWRSYLHZ
[1] To be used in single ended applications only. [2] Connected to flange.
Graphic symbol [1]
H[SRVHG GLHSDG
DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
Versio...
