BLS7G3135L-350P; BLS7G3135LS-350P
LDMOS S-band radar power transistor
Rev. 3 — 29 October 2013
Product data sheet
1. P...
BLS7G3135L-350P; BLS7G3135LS-350P
LDMOS S-band radar power
transistor
Rev. 3 — 29 October 2013
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power
transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Test signal
f (GHz)
VDS
PL
Gp
D
(V)
(W) (dB)
(%)
tr tf (ns) (ns)
pulsed RF
3.1
32 350 12 43 5
5
3.3
32 350 12 43 5
5
3.5
32 350 10 39 5
5
1.2 Features and benefits
Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (3.1 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range
NXP Semiconductors
BLS7G3135L(S)-350P
LDMOS S-band radar power
transistor
2. Pinning information
Table 2. Pinning Pin Description BLS7G3135L-350P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLS7G3135LS-350P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3. Ordering inform...
