BLU6H0410L-600P

BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz. Table 1. Application information Typical RF performance at VDS = 50 V; in a common source 860 MHz narrowband test circuit; unless otherwise specified. Test signal f IDq PL(AV) PL(M) Gp D IMD3 (MHz) (mA) (W) (W) (dB) (%) (dBc) pulsed, class-AB [1] 860 1.3 - 600 20 58 - [1] Measured at  = 10 %; tp = 1 ms. 1.2 Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phases)  Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W  High power gain  High efficiency  Internal input matching for high gain and optimum broadband operation  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz frequency range NXP Semiconductors BLU6H0410L(S)-600P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLU6H0410L-600P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLU6H0410LS-600P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 12 1 5 34 [1] 3 5 4 2 sym117 12 1 ...