JANSR2N7489T3

PD - 93822B IRHY57230CMSE RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) JANSR2N7489T3 200V, N-CHANNEL REF:MIL-PRF-19500/705 Product Summary 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57230CMSE 100K Rads (Si) 0.23Ω 12A JANSR2N7489T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-257AA Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor 12 7.6 A 48 75 W 0.6 W/°C VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage ±20 Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À P...