RADIATION HARDENED POWER MOSFET
PD - 94319B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary Part Number Radiation Level RDS(on) ID...
Description
PD - 94319B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A
IRHY597230CM 200V, P-CHANNEL
4# TECHNOLOGY c
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
T0-257AA
Features:
n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂
TJ TSTG
Operating Junction Storage Temperature Range Lead Temper...
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