RADIATION HARDENED POWER MOSFET
PD-96997
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary Part Number Radiation Level RD...
Description
PD-96997
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω IRHYB63134CM 300K Rads (Si) 0.09Ω
ID 19A 19A
IRHYB67134CM 150V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic TO-257AA (Tab-less)
Features:
n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repet...
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