JANSR2N7519T3

PD-96899C IRHYS597Z30CM JANSR2N7519T3 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level IRHYS597Z30CM 100 kRads(Si) IRHYS593Z30CM 300 kRads(Si) RDS(on) 0.072 0.072 ID -20A* -20A* QPL Part Number JANSR2N7519T3 JANSF2N7519T3 30V, P-CHANNEL REF: MIL-PRF-19500/732 R5 TECHNOLOGY Low-Ohmic TO-257AA Description IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Features  Single Event Effect (SEE) Hardened  Fast Switching  Low RDS(on)  Low Total Gate Charge  Simple Drive Requirements  Hermetically Sealed  Electrically Isolated  Ceramic Eyelets  Light Weight  ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Symbol Parameter Value Units ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current -20* ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gat...