IRHYS67130CM

IRHYS67130CM (JANSR2N7588T3) Radiation Hardened Power MOSFET Thru-Hole (Low–Ohmic TO-257AA) 100V, 20A, N-channel, R6 Technology PD-96986E Features Single event effect (SEE) hardened Low RDS (on) Low total gate charge Fast switching Simple drive requirements Hermetically sealed Electrically isolated Ceramic eyelets Light weight ESD rating: Class 1C per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Product Validation Product Summary BVDSS: 100V ID: 20A* RDS (on), max: 42m QG, max: 50nC REF: MIL-PRF-19500/755 Low-Ohmic TO-257AA Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV·cm2/mg). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package IRHYS67130CM Low-Ohmic TO-257AA IRHYS67130CMSCS Low-Ohmic TO-257AA JANSR2N7588T3 Low-Ohmic TO-257AA IRHYS63130CM Low-Ohmic TO-257...