IRHYS67134CM

IRHYS67134CM (JANSR2N7590T3) Radiation Hardened Power MOSFET Thru-Hole (Low–Ohmic TO-257AA) 150V, 19A, N-channel, R6 Technology PD-96930D Features Single event effect (SEE) hardened Low RDS (on) Low total gate charge Fast switching Simple drive requirements Hermetically sealed Electrically isolated Ceramic eyelets Light weight ESD rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails Synchronous rectification Active ORing circuits Power distribution circuits Load switch Product Validation Product Summary BVDSS: 150V ID: 19A RDS (on), max: 90m QG, max: 50nC REF: MIL-PRF-19500/755 Low-Ohmic TO-257AA Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV·cm2/mg). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package IRHYS67134CM Low-Ohmic TO-257AA IRHYS67134CMSCS Low-Ohmic ...