RADIATION HARDENED POWER MOSFET
PD-96925C
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
2N7592T3
IRHYS67230CM 200V, N-CHANNEL
TECHNOL...
Description
PD-96925C
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
2N7592T3
IRHYS67230CM 200V, N-CHANNEL
TECHNOLOGY
Product Summary Part Number Radiation Level IRHYS67230CM 100K Rads (Si) IRHYS63230CM 300K Rads (Si)
RDS(on) 0.13Ω 0.13Ω
ID 16A 16A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic TO-257AA
Features:
n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive...
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