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IRL5Y7413CM Dataheets PDF



Part Number IRL5Y7413CM
Manufacturers International Rectifier
Logo International Rectifier
Description N-CHANNEL POWER MOSFET
Datasheet IRL5Y7413CM DatasheetIRL5Y7413CM Datasheet (PDF)

PD - 94164A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number IRL5Y7413CM BVDSS 30V RDS(on) ID 0.025Ω 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extrem.

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PD - 94164A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number IRL5Y7413CM BVDSS 30V RDS(on) ID 0.025Ω 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Units 18* 18* A 72 75 W 0.6 W/°C VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage ±16 V Single Pulse Avalanche Energy ➁ 230 mJ Avalanche Current ➀ 18 A Repetitive Avalanche Energy ➀ 7.5 mJ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range 2.7 -55 to 150 V/ns oC Lead Temperature Weight 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com 1 08/07/01 IRL5Y7413CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min 30 — — — 1.0 30 — — IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — Typ Max Units —— V 0.03 — V/°C Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA — 0.025 — 0.030 —— —— — 25 — 250 — 100 — -100 — 79 — 9.0 — 23 — 20 — 130 — 52 — 46 6.8 — 1670 660 80 — — — Ω V S( ) µA nA nC ns nH pF Ω VGS = 10V, ID = 18A ➃ VGS = 4.5V, ID = 18A VDS = VGS, ID = 250µA VDS = 10V, IDS = 18A ➃ VDS = 30V ,VGS=0V VDS = 24V, VGS = 0V, TJ =125°C VGS = 16V VGS = -16V VGS =10V, ID = 18A VDS = 24V VDD = 15V, ID = 18A, VGS =10V, RG = 6.2Ω Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics .


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