Document
PD - 94164A
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
IRL5Y7413CM 30V, N-CHANNEL
Product Summary
Part Number IRL5Y7413CM
BVDSS 30V
RDS(on) ID 0.025Ω 18A*
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-257AA
Features:
n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor
Units 18* 18* A 72 75 W 0.6 W/°C
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage
±16 V
Single Pulse Avalanche Energy ➁
230
mJ
Avalanche Current ➀
18 A
Repetitive Avalanche Energy ➀
7.5 mJ
Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range
2.7 -55 to 150
V/ns oC
Lead Temperature Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
* Current is limited by package For footnotes refer to the last page
www.irf.com
1
08/07/01
IRL5Y7413CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage
RDS(on)
Static Drain-to-Source On-State Resistance
VGS(th) gfs IDSS
Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min 30 —
— — 1.0 30 — —
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
Typ Max Units —— V 0.03 — V/°C
Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA
— 0.025 — 0.030 —— —— — 25 — 250
— 100 — -100 — 79 — 9.0 — 23 — 20 — 130 — 52 — 46 6.8 —
1670 660 80
— — —
Ω V S( ) µA
nA nC
ns nH
pF
Ω
VGS = 10V, ID = 18A ➃ VGS = 4.5V, ID = 18A VDS = VGS, ID = 250µA VDS = 10V, IDS = 18A ➃ VDS = 30V ,VGS=0V
VDS = 24V, VGS = 0V, TJ =125°C
VGS = 16V VGS = -16V VGS =10V, ID = 18A VDS = 24V
VDD = 15V, ID = 18A, VGS =10V, RG = 6.2Ω
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
.