IRLF230

Provisional Data Sheet No. PD-9.1614 HEXFET® TRANSISTOR IRLF230 N-CHANNEL 200Volt, 0.40 Ω, HEXFET The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-tosource voltage of 5V. In addition to the well established characteristics of HEXFETs, they have the added advantage of providing low drive requirements to interface power loads to logic level IC’s and microprocessors. Fields of application include: high speed power applications such as switching regulators, switching converters, motor drivers, solenoid and relay drivers. The HEXFET technology is the key to International Rectifier’s advance line of logic level power MOSFET transistors. The efficient geometry and unique processing of the HEXFET achieve very low on-state resistance combine with high transconductance. Product Summary Part Number BVDSS IRLF230 200V RDS(on) 0.40Ω ID 5.2A Features: n Dynamic dv/dt Rating n Logic Level Gate Drive n RDS(on) Specific at VGS = 4V & 5V n 150°C Operating Temperature n Fast Switching n Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current  PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight IRLF230 5.2 3.3 20 25 0.20 ±10 4.2 -55 to 150 Units A W W/K ...