Document
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TC = 25°C)
30 V 8.9 mΩ 10 nC
f58 A
IRLR8729PbF-1
HEXFET® Power MOSFET
DD
G S
S
G D-Pak IRLR8729PbF-1
Features Industry-standard pinout D-Pak and I-Pak
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRLR8729PbF-1
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
2000
Tape and Reel Left
3000
Orderable Part Number
IRLR8729TRPbF-1 IRLR8729TRLPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation gMaximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max. 30 ± 20
58f 41f
260 55 27 0.37 -55 to + 175
300 (1.6mm from case)
Typ. ––– ––– –––
Max. 2.73 50 110
Units V
A W W/°C °C
Units °C/W
1
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June 29, 2014
IRLR8729PbF-1
Static @ TJ = 25°C (unless otherwise specified)
BVDSS ΔΒVDSS/ΔTJ RDS(on)
VGS(th) ΔVGS(th)/ΔTJ IDSS
IGSS
gfs Qg
Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 91 ––– ––– ––– ––– ––– ––– –––
––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 21 6.0 8.9 1.8 -6.2 ––– ––– ––– ––– ––– 10 2.1 1.3 4.0 2.6 4.8 6.3
1.6 10 47 11 10 1350 280 120
Max. Units
Conditions
––– ––– 8.9 11.9 2.35 –––
V VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1mA
eemΩ
VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A
V VDS = VGS, ID = 25μA
mV/°C
1.0 150 100 -100 ––– 16
μA
VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V VGS = -20V
S VDS = 15V, ID = 20A
––– VDS = 15V ––– nC VGS = 4.5V ––– ID = 20A ––– See Fig. 16
–––
––– nC VDS = 16V, VGS = 0V
2.7 Ω
e––– VDD = 15V, VGS = 4.5V
––– –––
ns
ID = 20A RG = 1.8Ω
––– See Fig. 14
––– VGS = 0V ––– pF VDS = 15V ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Av.