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IRLR8729PBF-1 Dataheets PDF



Part Number IRLR8729PBF-1
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET
Datasheet IRLR8729PBF-1 DatasheetIRLR8729PBF-1 Datasheet (PDF)

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TC = 25°C) 30 V 8.9 mΩ 10 nC f58 A IRLR8729PbF-1 HEXFET® Power MOSFET DD G S S G D-Pak IRLR8729PbF-1 Features Industry-standard pinout D-Pak and I-Pak Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRLR8729PbF-1 D-Pak Standard Pack Form Qua.

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VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TC = 25°C) 30 V 8.9 mΩ 10 nC f58 A IRLR8729PbF-1 HEXFET® Power MOSFET DD G S S G D-Pak IRLR8729PbF-1 Features Industry-standard pinout D-Pak and I-Pak Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRLR8729PbF-1 D-Pak Standard Pack Form Quantity Tape and Reel 2000 Tape and Reel Left 3000 Orderable Part Number IRLR8729TRPbF-1 IRLR8729TRLPbF-1 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ™Continuous Drain Current, VGS @ 10V Pulsed Drain Current gMaximum Power Dissipation gMaximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case gÃRθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Max. 30 ± 20 58f 41f 260 55 27 0.37 -55 to + 175 300 (1.6mm from case) Typ. ––– ––– ––– Max. 2.73 50 110 Units V A W W/°C °C Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 29, 2014 IRLR8729PbF-1 Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 91 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 6.0 8.9 1.8 -6.2 ––– ––– ––– ––– ––– 10 2.1 1.3 4.0 2.6 4.8 6.3 1.6 10 47 11 10 1350 280 120 Max. Units Conditions ––– ––– 8.9 11.9 2.35 ––– V VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA eemΩ VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A V VDS = VGS, ID = 25μA mV/°C 1.0 150 100 -100 ––– 16 μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 15V, ID = 20A ––– VDS = 15V ––– nC VGS = 4.5V ––– ID = 20A ––– See Fig. 16 ––– ––– nC VDS = 16V, VGS = 0V 2.7 Ω e––– VDD = 15V, VGS = 4.5V ––– ––– ns ID = 20A RG = 1.8Ω ––– See Fig. 14 ––– VGS = 0V ––– pF VDS = 15V ––– ƒ = 1.0MHz Avalanche Characteristics Parameter dEAS Single Pulse Av.


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