MGA-425P8

MGA-425P8 GaAs Enchancement-mode PHEMT   Power Amplifier in 2x2 mm2 LPCC Package Data Sheet Description Avago Technologies’s MGA-425P8 power amplifier is designed for wireless application in the 2–10 GHz frequency range. The PA has a high power ­efficiency (PAE) achieved through the use of Avago Technologies’s proprietary GaAs Enhancementmode pHEMT process. MGA-425P8 is housed in a ­miniature 2.0 x 2.0 x 0.75 mm 8‑lead leadless-plastic-chip-carrier (LPCC) package. The compact footprint, low profile couple with the excellent thermal efficiency of the LPCC package makes the MGA‑425P8 an ideal choice as power amplifier that saves board space. On-chip bias circuitry allows operation from a single +3.3V power supply. The output of the amplifier is near to 50Ω (below 2:1VSWR) around 4.9–5.8 GHz.This makes MGA-425P8 an ideal choice as power amplifier for broadband IEEE 802.11a system as well as other high performance wireless application in the 2–10 GHz ­frequency range. One external resistor (RBias) is used to set the bias ­current of the device over a wide range. This allows the designer to use the same part in several circuit positions and tailor the output power/linearity ­performance, and current consumption, to suit each ­position. Pin Connections and Package Marking 2.0 x 2.0 x 0.75 mm 8-lead LPCC Pin 1 (NC) Pin 8 (NC) Pin 2 (RFin) Pin 3 (NC) 2YX Pin 7 (RFout, VD) Pin 6 (NC) Pin 4 (NC) Top View Pin 5 (RBias) Note: Package marking provides orientation and identifica...