Document
MGA-81563 0.1–6 GHz 3 V, 14 dBm Amplifier
Data Sheet
Description
Avago’s MGA-81563 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from 0.1 to 6 GHz. Packaged in an ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package.
The output of the amplifier is matched to 50Ω (better than 2.1:1 VSWR) across the entire bandwidth. The input is partially matched to 50Ω (better than 2.5:1 VSWR) below 4 GHz and fully matched to 50Ω (better than 2:1 VSWR) above. A simple series inductor can be added to the input to improve the input match below 4 GHz. The amplifier allows a wide dynamic range by offering a 2.7 dB NF coupled with a +27 dBm Output IP3.
The circuit uses state-of-the-art PHEMT technology with proven reliability. On-chip bias circuitry allows operation from a single +3 V power supply, while resistive feedback ensures stability (K>1) over all frequencies and temperatures.
Features
x Lead-free Option Available
x
+14.8 dBm P at 2.0 GHz 1dB
+17 dBm P at 2.0 GHz sat
x Single +3V Supply
x 2.8 dB Noise Figure at 2.0 GHz
x 12.4 dB Gain at 2.0 GHz
x Ultra-miniature Package
x Unconditionally Stable
Applications
x Buffer or Driver Amp for PCS, PHS, ISM, SATCOM and WLL Applications
x High Dynamic Range LNA
Simplified Schematic
Surface Mount Package: SOT-363 (SC-70)
INPUT
OUTPUT and Vd
6
3
Pin Connections and Package Marking
81x
GND 1 GND 2 INPUT 3
6
OUTPUT and Vd
5 GND
4 GND
Note: Package marking provides orientation and identification. "81" = Device Code "x" = Date code character identifies month of manufacture
BBIIAASS
GND 1, 2, 4, 5
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.
MGA-81563 Absolute Maximum Ratings
Symbol V
d
V gd
V in
P in
T ch
T STG
Parameter Device Voltage, RF Output to Ground Device Voltage, Gate to Drain Range of RF Input Voltage to Ground CW RF Input Power Channel Temperature Storage Temperature
Units V
V
V
dBm °C °C
Absolute Maximum[1]
6.0
-6.0
+0.5 to -1.0
+13 165 -65 to 150
Thermal Resistance[2]:
Tch-c = 220°C/W
Notes: 1. Permanent damage may occur if any of
these limits are exceeded. 2. T = 25°C (T is defined to be the
CC
temperature at the package pins where contact is made to the circuit board.)
MGA-81563 Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vd = 3 V
Symbol Parameters and Test Conditions
Units Min. Typ. Max. Std Dev[2]
Gtest
Gain in test circuit[1]
f = 2.0 GHz
10.5 12.4 14.5 0.44
NFtest Noise Figure in test circuit[1]
f = 2.0 GHz
2.8 3.8 0.21
NF50 Noise Figure in 50 Ω system
f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 6.0 GHz
dB
3.1 0.21 3.0 2.7 2.7 2.8 3.5
|S21|2 Gain in 50 Ω system
f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz = 3.0 GHz f = 4.0 GHz f = 6.0 GHz
dB
12.5 0.44 12.5 12.3 11.8 11.4 10.2
P
Output Power at 1 d.