IRG7PSH50UDPbF

PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) trench IGBT technology Low switching losses C Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode G Tight parameter distribution Lead-Free Benefits E n-channel High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications U.P.S. Welding Solar Inverter Induction Heating G Gate VCES = 1200V I NOMINAL = 50A TJ(max) = 150°C VCE(on) typ. = 1.7V C E GC Super-247 C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current dDiode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 ...