IRG8P08N120KD-EPbF

  IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 5A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel GCE TO-220AB IRG8B08N120KDPbF GCE TO-247AC IRG8P08N120KDPbF GC E TO-247AD IRG8P08N120KD-EPbF G Gate C Collector E Emitter Benefits  High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Parallel Operation Rugged Transient Performance Environmentally friendly Base part number IRG8P08N120KDPbF IRG8P08N120KD-EPbF IRG8B08N120KDPbF Package Type TO-247AC TO-247AD TO-220AB Standard Pack Form Quantity Tube 25 Tube 25 Tube 50 Orderable Part Number IRG8P08N120KDPbF IRG8P08N120KD-EPbF IRG8B08N120KDPbF Absolute Maximum Ratings Parameter Max. VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE IFM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current Pulse Collector Current (see fig. 2) Clamped Inductive Load Current (see fig. 3) Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Vo...