IRG8P25N120KDPbF IRG8P25N120KD-EPbF
VCES = 1200V IC = 25A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 15A
Applications
Industrial Motor Drive UPS Solar Inverters Welding
G
E
n-channel
G CE
G CE
IRG8P25N120KDPbF IRG8P25N120KD‐EPbF
TO‐247AC
T...
