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IRG8P50N120KDPbF Dataheets PDF



Part Number IRG8P50N120KDPbF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG8P50N120KDPbF DatasheetIRG8P50N120KDPbF Datasheet (PDF)

  VCES = 1200V IC = 50A, TC =100°C IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 35A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E n-channel GC E GC E IRG8P50N120KDPbF  IRG8P50N120KD‐EPbF  TO‐247AC  TO‐247AD  G Gate C Collector E Emitter Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square.

  IRG8P50N120KDPbF   IRG8P50N120KDPbF


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