Document
VCES = 1200V IC = 60A, TC =100°C
IRG8P60N120KDPbF IRG8P60N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 40A
Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding
G
E
n-channel
CE G
E GC
IRG8P60N120KDPbF IRG8P60N120KD‐EPbF
TO‐247AC
TO‐247AD
G Gate
C Collector
E Emitter
Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
Benefits High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Parallel Operation Rugged Transient Performance Environmentally friendly
Base part number
IRG8P60N120KDPbF IRG8P60N120KD-EPbF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P60N120KDPbF IRG8P60N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM
Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current Pulse Collector Current (see fig. 2)
ILM
IF @ TC = 25°C IF @ TC = 100°C
IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current Diode Continuous Forward Current
Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Max.
1200 100 60 120
160 50 30 160 ±30 420 170 -40 to +150
300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA
Thermal Resistance Junction-to-Case (IGBT) Thermal Resistance Junction-to-Case (Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min. ––– ––– ––– –––
Typ. ––– ––– 0.24 40
Max. 0.3 0.8 ––– –––
Units V
A
V W C
Units °C/W
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October 30, 2014
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —
— 1.0
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.7 — 2.1
VGE(th)
Gate Threshold Voltage
5.0 —
VGE(th)/TJ Threshold Voltage Temperature Coeff.
— -16
gfe Forward Transconductance
— 22
ICES
Collector-to-Emitter Leakage Current
— 1.0 — 1.2
IGES Gate-to-Emitter Leakage Current VF Diode Forward Voltage Drop
—— — 2.3 — 2.5
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
— —
2.0 — 6.5
—
— 35 — ±400 2.9 —
V VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 5.0mA (25°C-150°C)
V IC = 40A, VGE = 15V, TJ = 25°C IC = 40A, VGE = 15V, TJ = 150°C
V VCE = VGE, IC = 1.6mA
mV/°C VCE = VGE, IC = 1.6mA (25°C-150°C)
S VCE = 50V, IC = 40A, PW = 20µs µA VGE = 0V, VCE = 1200V mA VGE = 0V, VCE = 1200V, TJ = 150°C nA VGE = ±30V V IF = 40A
IF = 40A, TJ = 150°C
Parameter
Min. Typ. Max Units
Conditions
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon
Eoff
Etotal
td(on)
tr
td(off)
tf Cies Coes Cres
RBSOA
Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA
Erec trr Irr
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
— 230 345 — 15 25 — 140 210 — 2.8 — — 2.3 — — 5.1 — — 40 — — 30 — — 240 — — 110 — — 4.4 — — 4.2 — — 8.6 — — 40 — — 30 — — 310 — — 110 — — 3700 — — 215 — — 120 —
FULL SQUARE
10 — —
— 1.8 — — 210 — — 21 —
IC = 40A nC VGE = 15V
VCC = 600V
mJ IC = 40A, VCC = 600V, VGE=15V RG = 5.0, TJ = 25°C
Energy losses include tail & diode ns reverse recovery
mJ IC = 40A, VCC = 600V, VGE=15V RG = 5.0, TJ = 150°C
Energy losses include tail & diode ns reverse recovery
VGE = 0V pF VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 160A VCC = 960V, Vp ≤ 1200V VGE = +20V to 0V
µs
TJ = 150°C,VCC = 600V, Vp ≤ 1200V VGE = +15V to 0V
mJ TJ = 150°C
ns VCC = 600V, IF = 40A
A VGE = 15V, Rg = 5.0
Notes:
VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature.
Values influenced by paras.