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IRG8P60N120KD-EPbF Dataheets PDF



Part Number IRG8P60N120KD-EPbF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG8P60N120KD-EPbF DatasheetIRG8P60N120KD-EPbF Datasheet (PDF)

  VCES = 1200V IC = 60A, TC =100°C IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 40A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E n-channel CE G E GC IRG8P60N120KDPbF  IRG8P60N120KD‐EPbF  TO‐247AC  TO‐247AD  G Gate C Collector E Emitter Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square.

  IRG8P60N120KD-EPbF   IRG8P60N120KD-EPbF


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  VCES = 1200V IC = 60A, TC =100°C IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 40A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E n-channel CE G E GC IRG8P60N120KDPbF  IRG8P60N120KD‐EPbF  TO‐247AC  TO‐247AD  G Gate C Collector E Emitter Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant Benefits  High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Parallel Operation Rugged Transient Performance Environmentally friendly Base part number IRG8P60N120KDPbF IRG8P60N120KD-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG8P60N120KDPbF IRG8P60N120KD-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current Pulse Collector Current (see fig. 2) ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Clamped Inductive Load Current (see fig. 3) Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 1200 100 60 120 160 50 30 160 ±30 420 170 -40 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance Parameter RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case (IGBT)  Thermal Resistance Junction-to-Case (Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 40 Max. 0.3 0.8 ––– ––– Units V A  V W C Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014     IRG8P60N120KDPbF/IRG8P60N120KD-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — — 1.0 VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 — 2.1 VGE(th) Gate Threshold Voltage 5.0 — VGE(th)/TJ Threshold Voltage Temperature Coeff. — -16 gfe Forward Transconductance — 22 ICES Collector-to-Emitter Leakage Current — 1.0 — 1.2 IGES Gate-to-Emitter Leakage Current VF   Diode Forward Voltage Drop   —— — 2.3 — 2.5 Switching Characteristics @ TJ = 25°C (unless otherwise specified) — — 2.0 — 6.5 — — 35 — ±400 2.9 — V VGE = 0V, IC = 250µA  V/°C VGE = 0V, IC = 5.0mA (25°C-150°C) V IC = 40A, VGE = 15V, TJ = 25°C IC = 40A, VGE = 15V, TJ = 150°C V VCE = VGE, IC = 1.6mA mV/°C VCE = VGE, IC = 1.6mA (25°C-150°C) S VCE = 50V, IC = 40A, PW = 20µs µA VGE = 0V, VCE = 1200V mA  VGE = 0V, VCE = 1200V, TJ = 150°C nA VGE = ±30V V IF = 40A IF = 40A, TJ = 150°C Parameter Min. Typ. Max Units Conditions Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area SCSOA   Erec trr Irr Short Circuit Safe Operating Area   Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — 230 345 — 15 25 — 140 210 — 2.8 — — 2.3 — — 5.1 — — 40 — — 30 — — 240 — — 110 — — 4.4 — — 4.2 — — 8.6 — — 40 — — 30 — — 310 — — 110 — — 3700 — — 215 — — 120 — FULL SQUARE 10  —   —   — 1.8 — — 210 — — 21 — IC = 40A nC VGE = 15V VCC = 600V mJ   IC = 40A, VCC = 600V, VGE=15V RG = 5.0, TJ = 25°C Energy losses include tail & diode ns  reverse recovery  mJ  IC = 40A, VCC = 600V, VGE=15V RG = 5.0, TJ = 150°C Energy losses include tail & diode ns reverse recovery   VGE = 0V pF VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 160A VCC = 960V, Vp ≤ 1200V VGE = +20V to 0V µs   TJ = 150°C,VCC = 600V, Vp ≤ 1200V VGE = +15V to 0V mJ TJ = 150°C ns VCC = 600V, IF = 40A A VGE = 15V, Rg = 5.0 Notes:  VCC = 80% (VCES), VGE = 20V.  R is measured at TJ of approximately 90°C.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  Maximum limits are based on statistical sample size characterization.  Pulse width limited by max. junction temperature.  Values influenced by paras.


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