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IRGIB10B60KD1P Dataheets PDF



Part Number IRGIB10B60KD1P
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGIB10B60KD1P DatasheetIRGIB10B60KD1P Datasheet (PDF)

IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free • UL Certified C G E n-channel VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V Benefits • Benchmark Efficie.

  IRGIB10B60KD1P   IRGIB10B60KD1P


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