IRGIB15B60KD1P

PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature Rated at 175°C Lead-Free Benefits Benchmark Efficiency for Motor Control. G E n-channel Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 12A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.80V Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current cICM Pulse Collector Current (Ref.Fig.C.T.5) ILM Clamped Inductive Load current IF @ TC = 25°C Diode Continuous Forward Current IF @ TC = 100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current VISOL RMS Isolation Voltage, Terminal to Case, t = 1 min VGE Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal / Mechanical Characteristics Parameter RθJC Junction-to-Case- IGBT RθJC Junction-to-Case- Diode RθCS Case-to-Sink, flat, greased surface RθJA Junction-to-Ambient, typical socket mount W...