IRGP4690DPBF

IRGP4690DPbF IRGP4690D-EPbF VCES = 600V IC = 90A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.70V @ IC = 75A Applications Industrial Motor Drive Inverters UPS Welding G E n-channel G Gate GC E TO-247AC IRGP4690DPbF C Collector GC E TO-247AD IRGP4690D-EP E Emitter Features Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number IRGP4690DPbF IRGP4690D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable part number IRGP4690DPbF IRGP4690D-EPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C ICM ILM Continuous Collector Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C IFM Diode Continous Forward Current fDiode Maximum Forward Current VGE Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C Maximu...