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SSS2N60 Dataheets PDF



Part Number SSS2N60
Manufacturers Tuofeng Semiconductor
Logo Tuofeng Semiconductor
Description N-CHANNEL MOSFET
Datasheet SSS2N60 DatasheetSSS2N60 Datasheet (PDF)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N60 2 Amps,600Volts N-CHANNEL MOSFET ■ DESCRIPTION The SSS2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to .DC converters and bridge circuits ■ FEATURES ● RDS(ON)=3..

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N60 2 Amps,600Volts N-CHANNEL MOSFET ■ DESCRIPTION The SSS2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to .DC converters and bridge circuits ■ FEATURES ● RDS(ON)=3.8Ω@VGS=10V ● Ultra Low gate charge(tupical 9.0nC) ● Low reverse transfer capacitance(Crss=typical 5.0pF) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability,high ruggedness ■ SYMBOL ■ ORDERING INF ORMATION Order Number Normal Lead Free Plating 2N60-TA3-T 2N60L-TA3-T 2N60-TF3-T 2N60L-TF3-T 2N60-TM3-T 2N60L-TM3-T 2N60-TN3-R 2N60L-TN3-R 2N60-TN3-T 2N60L-TN3-T Note:Pin Assignment: G:Gate D:Drain S:Source Package TO-220 TO-220F TO-251 TO-252 TO-252 Pin Assignment 12 3 GD S GD S GD S GD S GD S Packing Tube Tube Tube Tape Reel Tube 2N60L-TA3-T (1)T:Tube,R:Tape Reel (1)Packing Type (2)Package Type (3)Lead Plating (2)TA3:TO220,TF3:TO-220F,TM3:TO-251,TN3:TO-252 (3)L:Lead Free Plating Blank:Pb/Sn ■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless otherwise specified) PARAMETER SYMBOL PATINGS Gate-Source Voltage Drain-Source Voltage VDSS VGSS 600 ±30 Avalanche Current(Note 2) Drain Currenet Continuous Tc=25℃ Tc=100℃ IAP 2.0 2.0 ID 1.26 Drain Current Pulsed(Note 2) IDP 8.0 UNIT V V A A A A 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N60 Avalanche Energy Repetitive(Note 2) Single Pulse(Note 3) EAR 4.5 EAS 120 Peak Diode Recovery dv/dt(Note 4) dv/dt 4.5 Total Power Dissipation Tc=25℃ Derate above 25℃ 45 PD 0.36 Junction Temperature Storage Temperature TJ +150 TSTG -55~+150 Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged Absolute maximum ratings are stress ratings only and functional device operation is not implied 2.Repetitive Rating:Pulse width limited bu maximum junction temperature 3.L=64mH,IAS=2.0A,VDD=50V,RG=25Ω,Starting TJ=25℃ 4.ISD≤2.4A,di/dt≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ ■ THERMAL DATA mJ mJ v/ns W w/℃ ℃ ℃ PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F SYMBOL θJA θJC RATINGS 112 112 54 54 12 12 4 4 UNIT ℃/W ■ ELECTRICAL CHARACTERISTICS(TJ=25℃,unless Otherwise specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS=0V,ID=250μA VDS=600V,VGS=0V MIN TYP MAX UNIT 600 V 10 μA Gate-Body Leakage Forward Current Reverse Breakdown Voltage Temperature IGSS △BVDSS/△TJ VGS=30V,VDS=0V VGS=-30V,VDS=0V ID=250μA COoneCffihcaiernatcteristics Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-Resistance Forward Transconductance RDS(ON) ɡFS VDS=10V,ID=1A VDS=50V,ID=1A(Note 1) Dynamic Characteristics Input Capacitance Output Capacitance CISS COSS VDS=25V,VGS=0V,f=1MHZ Reverse Transfer Capacitance CRSS ■ ELECTRICAL CHARACTERISTICS(Cont.) 100 nA -100 nA 0.4 V/℃ 2.0 3.8 2.25 4.0 5 V Ω S 270 350 pF 40 50 pF 5 7 pF PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT 2 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N60 Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics tD(ON) tR tD(OFF) tF QG QGS QGD VDD=300V,ID=2.4A,RG=25Ω VDS=480V,VGS=10V,ID-2.4A Drain-Source Diode Forward Voltage VSD Continuous Drain-Source Current ISD Pulsed Drain-Source Current Reverse Recovery Time Reverse Recovery Charge ISM tRR QRR Note:1.Pulse Test: Pulse Width≤300μs,Duty Cycle≤2% VGS=0V,ISD=2.0A VGS=0V,ISD=2.4A, di/dt=100A/μA 2.Essentially Independent of Operating Temperature ■ TYPICAL CHARACTERISTICS 10 30 25 60 20 50 25 60 9.0 11 1.6 4.3 ns ns ns ns nC nC nC 1.4 V 2.0 A 8.0 A 180 ns 0.72 μC 3 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N60 TYPICAL CHARACTERISTICS(Cont) 4 .


XDUG11A-A SSS2N60 DSP56362


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