Document
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS2N60
2 Amps,600Volts
N-CHANNEL MOSFET
■ DESCRIPTION
The SSS2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to
.DC converters and bridge circuits ■ FEATURES
● RDS(ON)=3.8Ω@VGS=10V ● Ultra Low gate charge(tupical 9.0nC) ● Low reverse transfer capacitance(Crss=typical 5.0pF) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability,high ruggedness
■ SYMBOL
■ ORDERING INF ORMATION
Order Number
Normal
Lead Free Plating
2N60-TA3-T
2N60L-TA3-T
2N60-TF3-T
2N60L-TF3-T
2N60-TM3-T
2N60L-TM3-T
2N60-TN3-R
2N60L-TN3-R
2N60-TN3-T
2N60L-TN3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
Package
TO-220 TO-220F TO-251 TO-252 TO-252
Pin Assignment
12
3
GD
S
GD
S
GD
S
GD
S
GD
S
Packing
Tube Tube Tube Tape Reel Tube
2N60L-TA3-T
(1)T:Tube,R:Tape Reel
(1)Packing Type (2)Package Type (3)Lead Plating
(2)TA3:TO220,TF3:TO-220F,TM3:TO-251,TN3:TO-252 (3)L:Lead Free Plating Blank:Pb/Sn
■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless otherwise specified)
PARAMETER
SYMBOL
PATINGS
Gate-Source Voltage
Drain-Source Voltage
VDSS VGSS
600 ±30
Avalanche Current(Note 2) Drain Currenet Continuous
Tc=25℃ Tc=100℃
IAP 2.0
2.0 ID
1.26
Drain Current Pulsed(Note 2)
IDP 8.0
UNIT V V A A A A
1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS2N60
Avalanche Energy
Repetitive(Note 2) Single Pulse(Note 3)
EAR 4.5 EAS 120
Peak Diode Recovery dv/dt(Note 4)
dv/dt
4.5
Total Power Dissipation
Tc=25℃ Derate above 25℃
45 PD
0.36
Junction Temperature Storage Temperature
TJ +150 TSTG -55~+150
Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged
Absolute maximum ratings are stress ratings only and functional device operation is not implied
2.Repetitive Rating:Pulse width limited bu maximum junction temperature
3.L=64mH,IAS=2.0A,VDD=50V,RG=25Ω,Starting TJ=25℃ 4.ISD≤2.4A,di/dt≤200A/μs,VDD≤BVDSS, Starting TJ=25℃
■ THERMAL DATA
mJ mJ v/ns W w/℃ ℃ ℃
PARAMETER Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F
SYMBOL θJA
θJC
RATINGS 112 112 54 54 12 12 4 4
UNIT ℃/W
■ ELECTRICAL CHARACTERISTICS(TJ=25℃,unless Otherwise specified.)
PARAMETER Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
SYMBOL
BVDSS IDSS
TEST CONDITIONS
VGS=0V,ID=250μA VDS=600V,VGS=0V
MIN TYP MAX UNIT
600 V 10 μA
Gate-Body Leakage
Forward
Current
Reverse
Breakdown Voltage Temperature
IGSS △BVDSS/△TJ
VGS=30V,VDS=0V VGS=-30V,VDS=0V
ID=250μA
COoneCffihcaiernatcteristics Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-Resistance Forward Transconductance
RDS(ON) ɡFS
VDS=10V,ID=1A VDS=50V,ID=1A(Note 1)
Dynamic Characteristics
Input Capacitance Output Capacitance
CISS COSS
VDS=25V,VGS=0V,f=1MHZ
Reverse Transfer Capacitance
CRSS
■ ELECTRICAL CHARACTERISTICS(Cont.)
100 nA
-100
nA
0.4 V/℃
2.0 3.8 2.25
4.0 5
V Ω S
270 350 pF 40 50 pF 5 7 pF
PARAMETER
SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
2
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS2N60
Switching Characteristics
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics
tD(ON) tR tD(OFF) tF
QG
QGS
QGD
VDD=300V,ID=2.4A,RG=25Ω VDS=480V,VGS=10V,ID-2.4A
Drain-Source Diode Forward Voltage
VSD
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current Reverse Recovery Time Reverse Recovery Charge
ISM
tRR
QRR
Note:1.Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%
VGS=0V,ISD=2.0A
VGS=0V,ISD=2.4A, di/dt=100A/μA
2.Essentially Independent of Operating Temperature
■ TYPICAL CHARACTERISTICS
10 30 25 60 20 50 25 60 9.0 11 1.6 4.3
ns ns ns ns nC nC nC
1.4 V 2.0 A 8.0 A 180 ns 0.72 μC
3
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS2N60
TYPICAL CHARACTERISTICS(Cont)
4
.