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DF2B6.8M1ACT Dataheets PDF



Part Number DF2B6.8M1ACT
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description ESD Protection Diodes
Datasheet DF2B6.8M1ACT DatasheetDF2B6.8M1ACT Datasheet (PDF)

ESD Protection Diodes Silicon Epitaxial Planar DF2B6.8M1ACT DF2B6.8M1ACT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit 1: Pin 1 2: Pin 2 CST2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Electrostatic discharge voltage(IEC6100.

  DF2B6.8M1ACT   DF2B6.8M1ACT


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ESD Protection Diodes Silicon Epitaxial Planar DF2B6.8M1ACT DF2B6.8M1ACT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit 1: Pin 1 2: Pin 2 CST2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Electrostatic discharge voltage(IEC61000-4-2)(Contact) VESD ±8 kV Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-07-03 Rev.2.0 DF2B6.8M1ACT 4. Electrical Characteristics (Unless otherwise specified, Ta = 25) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance Fig. 4.1 Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage VRWM    5.0 V Reverse breakdown voltage VBR IBR = 1 mA 6.0   V Reverse current IR VRWM = 5 V   0.5 µA Clamp voltage VC (Note 1) IPP = 1 A  12  V Dynamic resistance RDYN (Note 2)   0.8  Ω Total capacitance Ct (Note 3) VR = 0 V, f = 1 MHz  0.3 0.5 pF Note 1: Based on IEC61000-4-5 8/20 µs pulse. Note 2: TLP parameter : Z0 = 50 Ω , tp = 100 ns , tr = 300 ps , averaging window : t1 = 30 ns to t2 = 60 ns , extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 3 A to 8 A. Note 3: Guaranteed by design. 5. Guaranteed ESD Protection (Note) Test Condition IEC61000-4-2 (Contact discharge) Note: Criterion: No damage to devices. ESD Protection ±8 kV 2 2012-07-03 Rev.2.0 6. Marking DF2B6.8M1ACT Marking Code NB Fig. 6.1 Marking Part Number DF2B6.8M1ACT 7. Land Pattern Dimensions (for reference only) Fig. 7.1 Land Pattern Dimensions (Unit: mm) 3 2012-07-03 Rev.2.0 8. Characteristics Curves (Note) DF2B6.8M1ACT Fig. 8.1 I - V Fig. 8.2 IR - VR Fig. 8.3 Ct - VR Fig. 8.4 Ct - f Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 4 2012-07-03 Rev.2.0 9. Clamp Voltage (VC) - Peak Pulse Current (IPP) (Note) DF2B6.8M1ACT Fig. 9.1 VC - IPP Fig. 9.2 Based on IEC61000-4-5 8/20 µs pulse. Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 10. Insertion Loss (S21) (Note) Fig. 10.1 S21 - f Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 5 2012-07-03 Rev.2.0 11. ESD Clamp Waveform (Note) DF2B6.8M1ACT Fig. 11.1 +8 kV Fig. 11.2 -8 kV Fig. 11.3 IEC61000-4-2(Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 6 2012-07-03 Rev.2.0 Package Dimensions DF2B6.8M1ACT Unit: mm Weight: 0.7 mg (typ.) TOSHIBA: 1-1P1S Nickname: CST2 Package Name(s) 7 2012-07-03 Rev.2.0 DF2B6.8M1ACT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this documen.


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