DF2B6.8CT

TOSHIBA Diodes for Protecting against ESD DF2B6.8CT DF2B6.8CT Product for Use Only as Protection against Electrostatic Discharge (ESD) *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. 0.6±0.05 Unit in mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Abusolute Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150* 150 −55 to 150 Unit mW °C °C 0.38 +0.02 -0.03 0.5±0.03 0.05±0.03 *: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimension of 4 mm × 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). CST2 JEDEC JEITA TOSHIBA ― ― 1-1P1A Weight: 0.7 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Reverse stand-off voltage Reverse breakdown voltage Reverse current...